SI7991DP Vishay Intertechnology, SI7991DP Datasheet

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SI7991DP

Manufacturer Part Number

SI7991DP

Description

Dual P-channel 30-V (d-s) Mosfet

Manufacturer

Vishay Intertechnology

Datasheet

1.SI7991DP.pdf (5 pages)

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Notes

a.

Document Number: 72515

S-32127—Rev. B, 27-Oct-03

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Continuous Drain Current (T

Pulsed Drain Current

continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

M

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

V

Surface Mounted on 1” x 1” FR4 Board.

i

DS

−30

−30

(V)

J

8

D1

6.15 mm

ti

7

D1

t A bi

6

D2

PowerPAK SO-8

Bottom View

0.035 @ V

0.023 @ V

5

J

J

a

a

= 150_C)

= 150_C)

t

D2

a

a

r

Parameter

Parameter

DS(on)

Dual P-Channel 30-V (D-S) MOSFET

1

GS

GS

a

a

S1

= −4.5 V

= −10 V

(W)

2

G1

a

Ordering Information: Si7991DP-T1

3

S2

5.15 mm

4

G2

A

= 25_C UNLESS OTHERWISE NOTED)

Steady State

Steady State

t v 10 sec

T

T

T

T

I

New Product

A

A

A

A

D

−10.2

−8.1

= 25_C

= 70_C

= 25_C

= 70_C

(A)

G

Symbol

Symbol

1

T

R

R

R

FEATURES

D TrenchFETr Power MOSFET

D New Low Thermal Resistance PowerPAKr Package

APPLICATIONS

D Load Switch

D Battery Switch

J

V

V

I

P

P

, T

thJC

DM

thJA

I

I

I

P-Channel MOSFET

GS

DS

D

D

S

D

D

with Low 1.07-mm Profile

stg

− Notebook PCs

− Desktop PCs

− Game Stations

D

S

1

1

10 secs

Typical

−10.2

−8.2

−2.9

3.5

2.2

28

60

3

−55 to 150

"20

G

−30

−30

2

Steady State

P-Channel MOSFET

Maximum

Vishay Siliconix

−6.6

−5.3

−1.2

1.4

0.9

3.7

35

85

S

D

2

2

Si7991DP

www.vishay.com

Unit

Unit

_C/W

_C

C/W

W

W

V

V

A

A

1

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