SI7991DP Vishay Intertechnology, SI7991DP Datasheet - Page 2

• Manufacturer Part Number: SI7991DP
• Description: Dual P-channel 30-V (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

Si7991DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
6
0
0
b
Parameter
1
V
a
a
DS
Output Characteristics
− Drain-to-Source Voltage (V)
a
2
a
a
J
V
GS
= 25_C UNLESS OTHERWISE NOTED)
= 10 thru 4 V
3
3 V
Symbol
V
r
r
I
DS(
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
t
SD
t
t
4
rr
fs
gs
gd
r
f
g
g
)
5
New Product
V
DS
I
V
D
DS
= −15 V, V
^ −1 A, V
I
V
F
V
V
= −30 V, V
V
V
V
GS
V
V
DS
DS
= −2.9 A, di/dt = 100 A/ms
V
GS
I
DS
S
DS
DD
DD
Test Condition
DS
= −2.9 A, V
= −10 V, I
= −15 V, I
v −5 V, V
= V
= −4.5 V, I
= −30 V, V
= −15 V, R
= −15 V, R
= 0 V, V
f = 1 MHz
GEN
GS
GS
GS
, I
= −10 V, I
= −10 V, R
D
= 0 V, T
GS
D
D
GS
= −250 mA
D
GS
GS
= −10.0 A
L
L
= −10.0 A
= −8.2 A
= "20 V
= 15 W
= 15 W
= −10 V
= 0 V
= 0 V
D
J
30
24
18
12
G
= 55_C
= −10.0 A
6
0
0.0
= 6 W
0.5
V
GS
1.0
Transfer Characteristics
Min
−30
−1
− Gate-to-Source Voltage (V)
1.5
25_C
T
C
2.0
0.019
0.027
Typ
−0.8
130
6.3
9.7
= 125_C
22
38
10
10
15
70
45
S-32127—Rev. B, 27-Oct-03
Document Number: 72515
2.5
"100
Max
0.023
0.035
−1.2
200
105
3.0
−3
−1
−5
57
15
25
70
−55_C
3.5
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
W
4.0