LPT16ED SiGe Semiconductor, LPT16ED Datasheet

LPT16ED

Manufacturer Part Number

LPT16ED

Description

30 GHZ Bipolar Transistor

Manufacturer

SiGe Semiconductor

Datasheet

1.LPT16ED.pdf (5 pages)

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Applications

Features

Ordering Information

Functional Block Diagram

38-DST-01 Rev 2.3 Sept 5/02

LPT16ED

Low phase noise oscillators up to 16 GHz

VCO’s, DRO’s and YIG oscillators

Point-to-point radios

Satellite communications

Fiber optics, OC-192 and OC-768

Local Multipoint Distribution Systems, LMDS

Low 1/f noise: -142 dBc/Hz at 100 Hz offset

Phase noise: -167 dBc/Hz at 100 kHz offset

Output power up to +13 dBm

Operation down to 1 volt, 2 mA

Gold bump pads for wire bond or flip chip (for

direct die attachment)

Type

Package

Bare Die

Waffle Pack

Shipped in

Remark

Product Description

The LPT16ED is a silicon germanium low phase

noise, high frequency NPN transistor for oscillator

applications up to 16GHz.

The transistor exhibits low 1/f noise and provides

+13 dBm typical output power at V

equal to 20 mA. It is easily operated from a single

supply voltage with appropriate external passive

components.

The silicon germanium technology used in this device

provides outstanding high-frequency performance

combined with high thermal conductivity and superior

reliability

conditions.

A complete mechanical description of the transistor is

available under SiGe Semiconductor Document

07MS001.

under

30 GHz SiGe Bipolar Transistor

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operating

LPT16ED

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Final

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