pa2423u SiGe Semiconductor, pa2423u Datasheet

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pa2423u

Manufacturer Part Number
pa2423u
Description
2.4 Ghz Bluetoothtm Power Amplifier Ic
Manufacturer
SiGe Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
pa2423u-R
Manufacturer:
SKYWORKS/思佳讯
Quantity:
20 000
Applications
Features
Ordering Information
Functional Block Diagram
131-DST-01 Rev 1.1 Apr-18-2006
PA2423U-EV1
Part Number
PA2423U-R
PA2423U
Bluetooth
USB dongles
PCMCIA, flash cards
Access points
2.4 GHz cordless telephone
+22.5 dBm Output Power
Low current 108 mA typical @ P
CMOS Enable Interface
Power-control and power-down modes
3.3 V single supply operation
Thin, lead-free 6 pin QFN package
I N
tm
wireless technology (Class 1)
(0.5 mm height)
(0.5 mm height)
Evaluation Kit
Stage 1
6 pin QFN
6 pin QFN
Package
GND
OUT
Figure 1: PA2423U Block Diagram
= +20 dBm
Samples
Remark
Tape &
Bias Generator
Reel
Interstage
V
V
Match
C T L
C C 1
Product Description
A monolithic, high-efficiency, silicon-germanium power
amplifier IC, the PA2423U is designed for 2.4 GHz
wireless applications, including Bluetooth
2.4 GHz cordless telephone applications. It delivers
+22.5 dBm
overcoming insertion losses of up to 2.5 dB between
amplifier output and antenna input.
The PA2423U provides a digital control input for
controlling power up and power down modes of
operation.
The PA2423U operates at 3.3 V DC. At typical output
power level (+22.5 dBm), the current consumption is
135 mA.
The
PA2423U, and its exposed die-pad package, soldered
to the system PCB, provide high thermal conductivity
and a subsequently low junction temperature. This
device is capable of operating at a duty cycle of 100
percent. The device is pin for pin compatible to the
PA2423L.
2.4 GHz Bluetooth
silicon/silicon-germanium
V
output
C C 0
Circuitry
Control
Stage 2
GND
power
V
R A M P
tm
making
Power Amplifier IC
OUT/V
structure
it
PA2423U
Preliminary
TM
C C 2
capable
Class1 and
of
1 of 10
the
of

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pa2423u Summary of contents

Page 1

... The PA2423U provides a digital control input for controlling power up and power down modes of operation. = +20 dBm OUT The PA2423U operates at 3.3 V DC. At typical output power level (+22.5 dBm), the current consumption is 135 mA. The silicon/silicon-germanium PA2423U, and its exposed die-pad package, soldered to the system PCB, provide high thermal conductivity and a subsequently low junction temperature ...

Page 2

... Die Pad GND Heatslug Die Pad is ground 131-DST-01 Rev 1.1 Apr-18-2006 2.4 GHz Bluetooth PA2423U Bottom View Figure 2: PA2423U Pin-Out Description PA2423U tm Power Amplifier IC Preliminary Die Pad ...

Page 3

... V = high CTL 131-DST-01 Rev 1.1 Apr-18-2006 2.4 GHz Bluetooth = dBm, T RAMP CTL IN Min. 2 VCC1 VCC2 - ≤ 22.5 dBm - RF, RAMP - PA2423U tm Power Amplifier IC Preliminary Min. Max. Unit -0.3 +3 dBm °C -40 +85 °C -40 +150 °C - +150 = 25 ° ...

Page 4

... Rev 1.1 Apr-18-2006 2.4 GHz Bluetooth = dBm T RAMP CTL IN Min. 2400 20 25 RAMP 32 All non-harmonically related outputs less than -50 dBc PA2423U tm Power Amplifier IC Preliminary = 25 ° 2.45 GHz, input and output A Typ. Max. Unit - 2500 MHz 22.5 - dBm -20 0 dBm 120 dBm/V 28 ...

Page 5

... P vs. V over V (2.45 GHz) OUT CTL CC 3.3 V 2 -10 -15 -20 0 0.5 1 1.5 2 2.5 V (V) CTL Figure 3: PA2423U Typical Performance Characteristics 131-DST-01 Rev 1.1 Apr-18-2006 2.4 GHz Bluetooth = 3 CC0 CC1 CC2 RAMP CTL I CC 0.17 0.15 0.13 0.11 0.09 0.07 0.05 -24 -22 - Gain vs Frequency over V 23 ...

Page 6

... OUT Figure 4: PA2423U Typical Performance Characteristics (Continued) Application Circuit Figure representation of the PA2423U application circuit. For a detailed schematic and layout, refer to SiGe’s PA2523U-EK1 Evaluation Kit Data Sheet (Document Number: 131-DST-02). From BB/T ransceiver Branding Information Figure 6 shows the branding for the PA2423U, including the Pin 1 location relative to the branding. ...

Page 7

... Figure 7: PA2423U Tape and Reel Diagram Package Dimensions The PA2423U is packaged pin QFN package, with a height of 0.5 mm. The detailed package drawing is shown in Figure 8. The underside of the package is an exposed die-pad structure. This allows for direct soldering to the PCB for enhanced thermal conductivity. The package dimensions are shown in the drawing below. ...

Page 8

... Recommended Application PCB Footprint Layout Figure 9 shows SiGe’s recommended PA2423U Application PCB footprint. Figure 9: PA2423U Recommended Application PCB Footprint 131-DST-01 Rev 1.1 Apr-18-2006 PA2423U tm 2.4 GHz Bluetooth Power Amplifier IC Preliminary RECOMMENDED FOOTPRINT QFN 6-PIN I/O 3.0X1 ...

Page 9

... PA2423U. Applying a voltage between 0 V and V CTL adjust the gain between -15 dB and 21 dB. Used in combination with a variable drive level to PA2423U, the V function can greatly optimize the PAE of the system at all four Bluetooth 131-DST-01 Rev 1 ...

Page 10

... Phone: +852 3428 7222 Fax: San Diego Phone: +1 858 668 3541 (ext. 226) Fax: United Kingdom Phone: +44 1279 464217 Fax: This publication supersedes and replaces all information previously supplied. PA2423U tm Power Amplifier IC Preliminary +852 3579 5450 +1 858 668 3546 +44 1279 464201 SiGe ...

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