R5009ANJTL ROHM Electronics, R5009ANJTL Datasheet - Page 3

• Manufacturer Part Number: R5009ANJTL
• Description: 10V Drive Nch MOSFET; Package: LPTS; Constitution materials list: Packing style: taping; Package quantity: 1000
• Manufacturer: ROHM Electronics

R5009ANJ
○
c
www.rohm.com
Electrical characteristics curves
2009 ROHM Co., Ltd. All rights reserved.
0.001
0.01
0.01
100
100
0.1
1.5
0.5
0.1
10
10
1
2
1
0
1
0.0
0.1
0
Fig.7 Static Drain-Source On-State
V
Pulsed
Operation in this
area is limited
by R
DS
Ta = 25°C
Single Pulse
DRAIN-SOURCE VOLTAGE : V
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
GATE-SOURCE VOLTAGE : V
Fig.1 Maximum Safe Operating Area
Fig.4 Typical Transfer Characteristics
GATE-SOURCE VOLTAGE : V
= 10V
DS(ON)
I
D
Resistance vs. Gate Source Voltage
1.5
= 4.5A
1
5
3.0
10
I
D
DC operation
= 9.0A
4.5
10
Ta=25°C
Pulsed
P
P
W
100
W
=1ms
=100us
6.0
GS
DS
GS
(V)
( V )
1000
(V)
15
1.5
0.5
15
10
6
5
4
3
2
1
0
2
1
0
5
0
-50
-50
0
Fig.8 Static Drain-Source On-State
V
Pulsed
Fig.2 Typical Output Characteristics(Ⅰ)
DRAIN-SOURCE VOLTAGE: V
CHANNEL TEMPERATURE: T
GS
CHANNEL TEMPERATURE: T
Fig.5 Gate Threshold Voltage
Ta= 25°C
Pulsed
= 10V
10
Resistance vs. Channel Temperature
0
0
vs. Channel Temperature
I
V
I
D
D
20
= 9.0A
3/5
DS
= 1mA
= 10V
50
50
6.0V
7.0V
5.5V
5.0V
30
I
D
= 4.5A
8.0V
V
100
100
GS
= 4.5V
40
10V
6.5V
ch
DS
ch
(°C)
(V)
(°C)
150
150
50
0.01
0.1
100
10
0.1
10
1
10
1
0.1
0.01
8
6
4
2
0
0
Fig.3 Typical Output Characteristics(Ⅱ)
V
Pulsed
V
Pulsed
Ta= 25°C
Pulsed
GS
Fig.6 Static Drain-Source On-State
Fig.9 Forward Transfer Admittance
DRAIN-SOURCE VOLTAGE: V
DS
= 10V
= 10V
1
DRAIN CURRENT : I
DRAIN CURRENT : I
6.0V
vs. Drain Current
Resistance vs. Drain Current
0.1
1
6.5V
2
7.0V
V
3
2009.02 - Rev.A
GS
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
5.0V
= 4.5V
10
1
8.0V
D
D
Data Sheet
(A)
(A)
4
10V
5.5V
DS
(V)
5
100
10