HY27US16281A Hynix Semiconductor, HY27US16281A Datasheet - Page 3

• Manufacturer Part Number: HY27US16281A
• Description: (HY27USxx281A) 128Mbit (16Mx8bit / 8Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

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FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
NAND INTERFACE
SUPPLY VOLTAGE
Memory Cell Array
PAGE SIZE
BLOCK SIZE
PAGE READ / PROGRAM
COPY BACK PROGRAM MODE
FAST BLOCK ERASE
Rev 0.6 / Nov. 2005
- Cost effective solutions for mass storage applications
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout compatibility for all densities
- 3.3V device: VCC = 2.7 to 3.6V
- x8 device : (512 + 16 spare) Bytes
- x16 device: (256 + 8 spare) Words
- x8 device: (16K + 512 spare) Bytes
- x16 device: (8K + 256 spare) Words
- Random access: 10us (max.)
- Sequential access: 3.3V device: 50ns (min.)
- Page program time: 200us (typ.)
- Fast page copy without external buffering
- Block erase time: 2ms (Typ.)
= (512+16) Bytes x 32 Pages x 1,024 Blocks
= (256+8) Words x 32 pages x 1,024 Blocks
: HY27US08281A
: HY27US16281A
: HY27USXX281A
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE DON'T CARE OPTION
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
DATA INTEGRITY
PACKAGE
- Manufacturer Code
- Device Code
- Simple interface with microcontroller
- Boot from NAND support
- Automatic Memory Download
- Program/Erase locked during Power transitions
- 100,000 Program/Erase cycles
- 10 years Data Retention
- HY27US(08/16)281A-T(P)
- HY27US(08/16)281A-S(P)
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
: 48-Pin USOP1 (12 x 17 x 0.65 mm)
- HY27US(08/16)281A-T (Lead)
- HY27US(08/16)281A-TP (Lead Free)
- HY27US(08/16)281A-S (Lead)
- HY27US(08/16)281A-SP (Lead Free)
HY27US(08/16)281A Series
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