STB100NF04 ST Microelectronics, Inc., STB100NF04 Datasheet

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STB100NF04

Manufacturer Part Number
STB100NF04
Description
N-channel 40V - 0.0043OHM - 120A TO-220/D2PAK/I2PAK STRIPFET%99 ii Power MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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STB100NF04
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STB100NF04LT4
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STB100NF04T4
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STB100NF04T4
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DESCRIPTION
This Power Mosfet is the latest development of ST-
Microelectronics unique “Single Feature Size
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
APPLICATIONS
ORDERING INFORMATION
October 2003
STP100NF04
STB100NF04
STB100NF04-1
TYPICAL R
STANDARD THRESHOLD DRIVE
100% AVALANCHE TESTED
HIGH CURRENT, HIGH SWITCHING SPEED
STB100NF04T4
TYPE
STB100NF04-1
SALES TYPE
STP100NF04
N-CHANNEL 40V - 0.0043
DS
(on) = 0.0043
V
40 V
40 V
40 V
DSS
< 0.0046
< 0.0046
< 0.0046
R
DS(on)
MARKING
P100NF04
B100NF04
B100NF04
120 A
120 A
120 A
I
D
STB100NF04, STB100NF04-1
300 W
300 W
300 W
Pw
™”
STripFET™ II POWER MOSFET
PACKAGE
- 120A TO-220/D
TO-220
D
I
2
2
PAK
PAK
INTERNAL SCHEMATIC DIAGRAM
TO-220
STP100NF04
D
2
PAK
AUTOMOTIVE SPECIFIC
TAPE & REEL
1
PACKAGING
2
3
TUBE
TUBE
PAK/I
I
2
PAK
2
PAK
1 2
3
1/15

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STB100NF04 Summary of contents

Page 1

... APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED ORDERING INFORMATION SALES TYPE STP100NF04 STB100NF04T4 STB100NF04-1 October 2003 STB100NF04, STB100NF04-1 - 120A TO-220/D STripFET™ II POWER MOSFET 120 A 300 W 120 A 300 W 120 A ...

Page 2

... STP100NF04, STB100NF04, STB100NF04-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I (#) Drain Current (continuos Drain Current (continuos Drain Current (pulsed Total Dissipation at T TOT Derating Factor dv/dt (1) Peak Diode Recovery voltage slope ...

Page 3

... Forward On Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Reverse Recovery Current I RRM Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1 Pulse width limited by safe operating area. STP100NF04, STB100NF04, STB100NF04-1 Test Conditions 25V MHz ...

Page 4

... STP100NF04, STB100NF04, STB100NF04-1 Power Derating vs Tc Output Characteristics Transconductance 4/15 Max Id Current vs Tc Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics STP100NF04, STB100NF04, STB100NF04-1 Capacitance Variations Normalized On Resistance vs Temperature Normalized Breakdown voltage vs Temperature 5/15 ...

Page 6

... STP100NF04, STB100NF04, STB100NF04-1 Thermal Resistance Rthj-a vs PCB Copper Area Safe Operating Area Thermal Impedance 6/15 Max Power Dissipation vs PCB Copper Area ...

Page 7

... Average Power Dissipation in Avalanche (Single Pulse) D(AVE the Time in Avalanche AV To derate above 25 °C, at fixed I Where the value coming from Normalized Thermal Response at fixed pulse width equal STP100NF04, STB100NF04, STB100NF04 the following equation must be applied jmax CASE ...

Page 8

... STP100NF04, STB100NF04, STB100NF04-1 Parameter Node CTHERM1 CTHERM2 CTHERM3 CTHERM4 RTHERM1 RTHERM2 RTHERM3 RTHERM4 8/15 SPICE THERMAL MODEL Value 0.011 0.0012 0.05 0.1 0.09 0.02 0.11 0.17 ...

Page 9

... Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit STP100NF04, STB100NF04, STB100NF04-1 Fig. 2: Unclamped Inductive Waveform Fig. 3.1: Inductive Load Switching And Diode Re- covery Times Waveform Fig. 4.1: Gate Charge test Waveform 9/15 ...

Page 10

... STP100NF04, STB100NF04, STB100NF04-1 Fig. 5: Test Circuit For Diode Recovery Times 10/15 Fig. 5.1: Diode Recovery Times Waveform ...

Page 11

... DIM. MIN. TYP. A 4.40 C 1.23 D 2.40 D1 1.27 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.4 H2 10.0 L2 16.4 L4 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 Dia STP100NF04, STB100NF04, STB100NF04-1 MAX. MIN. 4.60 0.173 1.32 0.048 2.72 0.094 0.70 0.019 0.88 0.024 1.70 0.044 1.70 0.044 5.15 0.194 2.7 0.094 10.40 0.393 14.0 0.511 2.95 0.104 15.75 0.600 6.6 0.244 3.93 0.137 3.85 0.147 inch TYP. MAX. 0.181 ...

Page 12

... STP100NF04, STB100NF04, STB100NF04-1 DIM. MIN. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1 0º 12/ PAK MECHANICAL DATA mm. TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 8 10.4 8.5 5.28 15.85 1.4 1.75 3.2 0.4 8º inch MIN. TYP. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 0.393 0.334 0.192 0.590 0.050 ...

Page 13

... TO-262 (I mm. DIM. MIN. TYP A 4.40 A1 2.40 b 0.61 b1 1.14 c 0.49 c2 1.23 D 8.95 e 2. 3.50 L2 1.27 STP100NF04, STB100NF04, STB100NF04-1 2 PAK) MECHANICAL DATA MAX. MIN. 4.60 0.173 2.72 0.094 0.88 0.024 1.70 0.044 0.70 0.019 1.32 0.048 9.35 0.352 2.70 0.094 5.15 0.194 10.40 0.393 14 0.511 3.93 0.137 1.40 0.050 inch TYP. MAX. 0.181 0.107 0.034 0.066 0.027 ...

Page 14

... STP100NF04, STB100NF04, STB100NF04 PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 ...

Page 15

... The ST logo is a trademark of STMicroelectronics © 2000 STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. STP100NF04, STB100NF04, STB100NF04-1 STMicroelectronics GROUP OF COMPANIES http://www.st.com 15/15 ...

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