STB100NH02L ST Microelectronics, Inc., STB100NH02L Datasheet

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STB100NH02L

Manufacturer Part Number
STB100NH02L
Description
N-channel 24V - 0.0052 Ohm - 60A D2PAK StripFET Iii Power MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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STB100NH02L
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STB100NH02LT4
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STB100NH02LT4
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STB100NH02LT4-TR
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DESCRIPTION
The STB100NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
applications where high efficiency is to be achieved.
APPLICATIONS
Ordering Information
ABSOLUTE MAXIMUM RATINGS
September 2003
STB100NH02L
STB100NH02LT4
TYPICAL R
TYPICAL R
R
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
LOW THRESHOLD DEVICE
SURFACE-MOUNTING D
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
Symbol
V
E
DS(ON)
V
I
spike(1)
DM (3)
V
I
I
V
P
AS (4)
T
D (2)
D (2)
DGR
T
GS
stg
DS
TYPE
tot
j
SALES TYPE
* Qg INDUSTRY’s BENCHMARK
Drain-source Voltage Rating
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
DS
(on) = 0.0052
(on) = 0.007
V
24 V
DSS
Parameter
2
< 0.006
PAK (TO-263)
R
DS(on)
@ 5 V
C
GS
@ 10 V
= 25°C
N-CHANNEL 24V - 0.0052
GS
= 20 k )
B100NH02L
MARKING
= 0)
C
C
60 A
= 25°C
= 100°C
I
D
(2)
STripFET™ III POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
PACKAGE
TO-263
-55 to 175
Value
± 20
0.67
240
100
600
30
24
24
60
60
STB100NH02L
(Suffix “T4”)
TO-263
D
²
PAK
1
- 60A D²PAK
3
TAPE & REEL
PACKAGING
W/°C
Unit
mJ
°C
W
V
V
V
V
A
A
A
1/11

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STB100NH02L Summary of contents

Page 1

... PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX TAPE & REEL (SUFFIX “T4”) DESCRIPTION The STB100NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter applications where high efficiency achieved. ...

Page 2

... STB100NH02L THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (5) ON Symbol Parameter ...

Page 3

... STB100NH02L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Turn-on Delay Time t d(on) Rise Time Total Gate Charge g Q Gate-Source Charge gs Gate-Drain Charge Q gd SWITCHING OFF Symbol Parameter t Turn-off Delay Time d(off) Fall Time t f SOURCE DRAIN DIODE Symbol Parameter I Source-drain Current SD I Source-drain Current (pulsed) ...

Page 4

... STB100NH02L Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/11 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... STB100NH02L Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . Normalized on Resistance vs Temperature Normalized Breakdown Voltage vs Temperature. . 5/11 ...

Page 6

... STB100NH02L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/11 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STB100NH02L DIM. MIN. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1 0° PAK MECHANICAL DATA mm. TYP. MAX. MIN. 4.6 0.173 2.69 0.098 0.23 0.001 0.93 0.028 1.7 0.045 0.6 0.018 1.36 0.048 9.35 0.352 8 10.4 0.394 8.5 5.28 0.192 15.85 0.591 1.4 0.050 1.75 0.055 3.2 0.094 0.4 4° inch. TYP. TYP. 0.181 0.106 ...

Page 8

... STB100NH02L 2 D PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 B0 15.7 15.9 0.618 D 1.5 1.6 0.059 D1 1.59 1.61 0.062 E 1.65 1.85 0.065 F 11.4 11.6 0.449 K0 4.8 5.0 0.189 P0 3.9 4.1 0.153 P1 11.9 12.1 0.468 P2 1.9 2.1 0075 R 50 1.574 T 0.25 0.35 .0.0098 W 23.7 24.3 0.933 * on sales type 8/11 TUBE SHIPMENT (no suffix)* inch MAX. 0.421 0.626 ...

Page 9

... STB100NH02L Buck Converter: Power Losses Estimation The power losses associated with the FETs in a Synchronous Buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performan ce comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the working temperature, is not considered ...

Page 10

... STB100NH02L P conduction P switching Recovery P diode Conduction P gate Qoss Parameter d Q gsth Q gls Pconduction Pswitching Pdiode Pgate P Qoss 1 Dissipated by SW1 during turn-on 10/11 High Side Switch (SW1 DS(on)SW1 gsth(SW1) gd(SW1) Not Applicable Not Applicable g(SW1 ...

Page 11

... STB100NH02L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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