STB10NA40 ST Microelectronics, Inc., STB10NA40 Datasheet

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STB10NA40

Manufacturer Part Number
STB10NA40
Description
Old PRODUCT: Not Suitable For Design-in
Manufacturer
ST Microelectronics, Inc.
Datasheet

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Part Number
Manufacturer
Quantity
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Part Number:
STB10NA40
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB10NA40
Manufacturer:
ST
0
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
October 1995
STB10NA40
Symbol
TYPICAL R
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX "-1")
SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
V
DM
V
V
T
P
DGR
30V GATE TO SOURCE VOLTAGE RATING
I
I
T
stg
DS
GS
D
D
tot
TYPE
( )
j
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
DS(on)
400 V
V
= 0.46
DSS
< 0.55
Parameter
R
DS(on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
FAST POWER MOS TRANSISTOR
10 A
= 25
= 100
I
D
o
C
o
C
o
C
INTERNAL SCHEMATIC DIAGRAM
TO-262
I2PAK
-65 to 150
1 2
Value
400
400
125
150
6.3
3
10
40
1
30
STB10NA40
D2PAK
TO-263
1
3
W/
Unit
o
o
W
V
V
V
A
A
A
C
C
o
1/10
C

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STB10NA40 Summary of contents

Page 1

... October 1995 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR I DS(on INTERNAL SCHEMATIC DIAGRAM = 100 STB10NA40 I2PAK D2PAK TO-262 TO-263 Value 400 400 30 10 6.3 40 125 1 -65 to 150 150 3 Unit ...

Page 2

... STB10NA40 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting Repetitive Avalanche Energy ...

Page 3

... GS (see test circuit, figure 5) Test Conditions di/dt = 100 100 150 (see test circuit, figure 5) Thermal Impedance STB10NA40 Min. Typ. Max. Unit 115 155 ns 250 Min. Typ. Max. Unit ...

Page 4

... STB10NA40 Derating Curve Transfer Characteristics Static Drain-source On Resistance 4/10 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage ...

Page 5

... Capacitance Variations Normalized On Resistance vs Temperature Turn-off Drain-source Voltage Slope Normalized Gate Threshold Voltage vs Temperature Turn-on Current Slope Cross-over Time STB10NA40 5/10 ...

Page 6

... STB10NA40 Switching Safe Operating Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuit 6/10 Accidental Overload Area Fig. 2: Unclamped Inductive Waveform ...

Page 7

... Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And DIode Recovery Times Fig. 4: Gate Charge test Circuit STB10NA40 7/10 ...

Page 8

... STB10NA40 TO-262 (I2PAK) MECHANICAL DATA DIM. MIN. A 4.3 A1 2.49 B 0.7 B1 1.2 B2 1.25 C 0. 13.2 L1 3.48 L2 1.27 L2 8/10 mm TYP. MAX. MIN. 4.6 0.169 2.69 0.098 0.93 0.027 1.38 0.047 1.4 0.049 0.6 0.017 1.36 0.047 9.35 0.354 2.64 0.096 10.28 0.393 13.5 0.519 3.78 0.137 1.37 0.050 L1 D inch TYP. MAX. 0.181 0.106 0.036 0.054 0.055 0.023 ...

Page 9

... 1. TYP. MAX. MIN. 4.6 0.169 2.69 0.098 0.93 0.027 1.4 0.049 0.6 0.017 1.36 0.047 9.35 0.354 10.28 0.393 5.28 0.192 15.85 0.590 1.37 0.050 1.75 0.055 STB10NA40 inch TYP. MAX. 0.181 0.106 0.036 0.055 0.023 0.053 0.368 0.404 0.208 0.624 0.054 0.068 9/10 ...

Page 10

... STB10NA40 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...

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