STB50NE10 ST Microelectronics, Inc., STB50NE10 Datasheet

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STB50NE10

Manufacturer Part Number
STB50NE10
Description
N-channel 100V - 0.021 Ohm - 50A - D2PAK StripFET Power MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
July 2001
.
STB50NE10
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE AT 100
APPLICATION ORIENTED
CHARACTERIZATION
FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
HIGH CURRENT, HIGH SWITCHING SPEED
SOLENOID AND RELAY DRIVERS
MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT
Pulse width limited by safe operating area.
Symbol
dv/dt
I
V
DM
V
V
P
T
DGR
I
I
T
GS
stg
DS
D
D
TYPE
tot
j
(
(1)
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.021
100 V
V
DSS
Parameter
<0.027
R
DS(on)
C
GS
o
= 25°C
C
N-CHANNEL 100V - 0.021
GS
= 20 k )
= 0)
C
C
= 25°C
= 100°C
50 A
I
D
STripFET™ POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
(1) I
SD
50A, di/dt 300A/µs, V
-65 to 175
Value
± 20
100
100
200
180
175
1.2
50
35
6
(Suffix “T4”)
TO-263
D
DD
2
STB50NE10
PAK
1
V
- 50A D
(BR)DSS
3
, T
j
T
JMAX
2
W/°C
V/ns
Unit
PAK
°C
°C
W
V
V
V
A
A
A
1/9

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STB50NE10 Summary of contents

Page 1

... STripFET™ POWER MOSFET R I DS(on INTERNAL SCHEMATIC DIAGRAM = 25° 100° 25° STB50NE10 - 50A PAK TO-263 (Suffix “T4”) Value 100 100 ± 200 180 1.2 6 -65 to 175 175 50A, di/dt 300A/µs, V ...

Page 2

... STB50NE10 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Rthc-sink Thermal Resistance Case-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol Avalanche Current, Repetitive or Not-Repetitive I AR (pulse width limited by T Single Pulse Avalanche Energy E AS (starting °C, I ...

Page 3

... (Inductive Load, Figure 5) Test Conditions di/dt = 100A/µ 150° (see test circuit, Figure 5) Thermal Impedance STB50NE10 Min. Typ. Max. Unit 100 135 ns 123 166 Min. Typ. Max. Unit 45 ...

Page 4

... STB50NE10 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . on Resistance vs Temperature Normalized . . STB50NE10 5/9 ...

Page 6

... STB50NE10 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... PAK MECHANICAL DATA MAX. MIN. 4.6 0.173 2.69 0.098 0.23 0.001 0.93 0.028 1.7 0.045 0.6 0.018 1.36 0.048 9.35 0.352 8 10.4 0.394 5.28 0.192 15.85 0.591 1.4 0.050 1.75 0.055 3.2 0.094 0.4 8° STB50NE10 inch. TYP. TYP. 0.181 0.106 0.009 0.037 0.067 0.024 0.054 0.368 0.315 0.409 0.334 0.208 0.624 0.055 0.069 0.126 0.016 0° 8° 7/9 ...

Page 8

... STB50NE10 2 D PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 B0 15.7 15.9 0.618 D 1.5 1.6 0.059 D1 1.59 1.61 0.062 E 1.65 1.85 0.065 F 11.4 11.6 0.449 K0 4.8 5.0 0.189 P0 3.9 4.1 0.153 P1 11.9 12.1 0.468 P2 1.9 2.1 0075 R 50 1.574 T 0.25 0.35 .0.0098 W 23.7 24.3 0.933 * on sales type 8/9 TUBE SHIPMENT (no suffix)* inch MAX. 0.421 0.626 ...

Page 9

... Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is registered trademark of STMicroelectronics 2001 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES http://www.st.com STB50NE10 9/9 ...

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