BU508DF Philips Semiconductors (Acquired by NXP), BU508DF Datasheet - Page 5
BU508DF
Manufacturer Part Number
BU508DF
Description
BU508DF; Silicon Diffused Power Transistor;; Package: SOT199 (3-lead TO-247F)
Manufacturer
Philips Semiconductors (Acquired by NXP)
Datasheet
1.BU508DF.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
July 1998
Silicon Diffused Power Transistor
Fig.10. Forward bias safe operating area. T
I
II
NB: Mounted with heatsink compound and
0.001
0.01
0.01
100
0.1
0.1
1.0E-07
10
10
Region of permissible DC operation.
Extension for repetitive pulse operation.
30
the envelope.
1
1
Fig.9. Transient thermal impedance.
Zth K/W
1
IC / A
0.05
0.02
0.5
0.2
0.1
ICM max
IC max
Z
5 newton force on the centre of
0
th j-hs
1.0E-05
= f(t); parameter D = t
Ptot max
10
t / s
I
1E-03
P
D
= 0.01
100
t
p
T
1.0E-01
VCE / V
II
D =
p
/T
t
T
bu508ax
p
t
1000
tp =
10 us
100 us
1 ms
10 ms
DC
1.0E+1
hs
= 25˚C
5
Fig.11. Forward bias safe operating area. T
I
II
NB: Mounted without heatsink compound and
0.01
100
0.1
10
Region of permissible DC operation.
Extension for repetitive pulse operation.
30
the envelope.
1
1
IC / A
ICM max
IC max
5 newton force on the centre of
Ptot max
10
I
= 0.01
100
Product specification
VCE / V
II
BU508DF
1000
tp =
10 us
100 us
1 ms
10 ms
DC
hs
Rev 1.200
= 25˚C