BU508DF

Manufacturer Part NumberBU508DF
DescriptionBU508DF; Silicon Diffused Power Transistor;; Package: SOT199 (3-lead TO-247F)
ManufacturerPhilips Semiconductors (Acquired by NXP)
BU508DF datasheet
 
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Philips Semiconductors
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope with integrated efficiency
diode, primarily for use in horizontal deflection circuits of colour television receivers.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V
Collector-emitter voltage peak value
CESM
V
Collector-emitter voltage (open base)
CEO
I
Collector current (DC)
C
I
Collector current peak value
CM
P
Total power dissipation
tot
V
Collector-emitter saturation voltage
CEsat
I
Collector saturation current
Csat
V
Diode forward voltage
F
t
Fall time
f
PINNING - SOT199
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
Collector-emitter voltage peak value
CESM
V
Collector-emitter voltage (open base)
CEO
I
Collector current (DC)
C
I
Collector current peak value
CM
I
Base current (DC)
B
I
Base current peak value
BM
P
Total power dissipation
tot
T
Storage temperature
stg
T
Junction temperature
j
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
Junction to heatsink
th j-hs
R
Junction to heatsink
th j-hs
R
Junction to ambient
th j-a
July 1998
CONDITIONS
V
= 0 V
BE
T
25 ˚C
hs
I
= 4.5 A; I
= 1.6 A
C
B
f = 16kHz
I
= 4.5 A
F
I
= 4.5 A; f = 16kHz
Csat
PIN CONFIGURATION
case
1
2
3
CONDITIONS
V
= 0 V
BE
T
25 ˚C
hs
CONDITIONS
without heatsink compound
with heatsink compound
in free air
1
Product specification
BU508DF
TYP.
MAX.
UNIT
-
1500
V
-
700
V
-
8
A
-
15
A
-
34
W
-
1.0
V
4.5
-
A
1.6
2.0
V
0.7
-
s
SYMBOL
c
b
e
MIN.
MAX.
UNIT
-
1500
V
-
700
V
-
8
A
-
15
A
-
4
A
-
6
A
-
34
W
-65
150
˚C
-
150
˚C
TYP.
MAX.
UNIT
-
3.7
K/W
-
2.8
K/W
35
-
K/W
Rev 1.200

BU508DF Summary of contents

  • Page 1

    ... 16kHz 16kHz Csat PIN CONFIGURATION case CONDITIONS ˚C hs CONDITIONS without heatsink compound with heatsink compound in free air 1 Product specification BU508DF TYP. MAX. UNIT - 1500 V - 700 1 1.6 2 ...

  • Page 2

    ... 100 mA 4 CONDITIONS I = 0.1 A 4.5 A;L 1 mH;C Csat 1 B(end 2. Product specification BU508DF MIN. TYP. MAX. - 2500 - 22 - MIN. TYP. MAX 1 2.0 700 - - - - 1 1 1.6 2.0 TYP. MAX 125 - = ...

  • Page 3

    ... July 1998 ICsat t IBend t IBend -VBB t Fig.3. Switching times test circuit ICsat 100 0.1 - IBM Fig.4. Typical DC current gain Product specification BU508DF + 150 v nominal adjust for ICsat 1mH D.U.T. LB 12nF BU508AD parameter V CE Rev 1.200 ...

  • Page 4

    ... BU508AD PD% 120 110 100 Fig.8. Normalised power dissipation Product specification BU508DF BU508AD 4. IB/A V sat = parameter Normalised Power Derating with heatsink compound 100 120 140 Ths / C PD% = 100 P ...

  • Page 5

    ... VCE / V = 25˚ Product specification 0.01 ICM max IC max II Ptot max 100 VCE / V Region of permissible DC operation. Extension for repetitive pulse operation newton force on the centre of the envelope. BU508DF 100 1000 = 25˚C hs Rev 1.200 ...

  • Page 6

    ... Fig.12. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 15.3 max 3.1 3.3 7.3 6.2 5.8 3 1.2 1.0 5.45 5.45 6 Product specification BU508DF 5.2 max 3.2 seating plane 3.5 max not tinned 0.7 max 0.4 M 2.0 Rev 1.200 o 45 ...

  • Page 7

    ... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 7 Product specification BU508DF Rev 1.200 ...