ZUMD54 Zetex Inc., ZUMD54 Datasheet
ZUMD54
Manufacturer Part Number
ZUMD54
Description
Silicon Epitaxial Schottky Barrier Diodes
Manufacturer
Zetex Inc.
Datasheet
1.ZUMD54.pdf
(2 pages)
SOT323 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1– DECEMBER 1998
FEATURES:
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
¤ Dual Device; For simultaneous continuous use T
PARAMETER
Continuous Reverse Voltage
Forward Current
Forward Voltage @ I
Repetitive Peak Forward Current
Non Repetitive Forward Current
Power Dissipation at T
Storage Temperature Range
JunctionTemperature
PARAMETER
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Diode Capacitance
Reverse Recovery
Time
SINGLE
ZUMD54
Partmark: D8
1
3
Low V
: PSU, Mobile Telecomms & SCSI
F
F
=10mA
COMMON CATHODE
ZUMD54C
Partmark: D8C
amb
& High Current Capability
=25°C
¤
2
SYMBOL MIN.
V
V
I
C
t
R
rr
(BR)R
F
D
1
t<1s
3
30
amb
j
=100°C.
SYMBOL
V
I
V
I
I
P
T
T
F
FRM
FSM
tot
stg
j
R
F
= 25°C unless otherwise stated).
TYP.
50
135
200
280
350
530
1.4
7.5
MAX. UNIT
240
320
400
500
1000
2
10
5
V
mV
mV
mV
mV
mV
pF
ns
A
-55 to +150
VALUE
200
400
300
600
330
125
30
ZUMD54C
3
ZUMD54
CONDITIONS.
I
I
I
I
I
I
V
f=1MHz,V
switched from
R
R
F
F
F
F
F
I
2
F
=0.1mA
=1mA
=10mA
=30mA
=100mA
R
L
=10 A
=10mA to I
=100 , I
=25V
R
=1V
R
=1mA
UNIT
mW
R
mA
mV
mA
mA
°C
°C
V
=10mA
1
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ZUMD54 Summary of contents
Page 1
... SYMBOL MIN. TYP (BR)R V 135 F 200 280 350 530 =100°C. j ZUMD54 ZUMD54C 3 2 VALUE 30 200 400 300 600 330 -55 to +150 125 MAX. UNIT CONDITIONS = 240 mV I =0.1mA F 320 mV I ...
Page 2
... ZUMD54 ZUMD54C TYPICAL CHARACTERISTICS 1 100m 10m +125°C +85°C +25°C 1m 100 10 0 0.15 0.3 0.45 Forward Voltage Characteristics Reverse Voltage VR ( Characteristics 10m 1m 100 10 1 0.6 0.75 0.9 (V) F 330 270 180 +125°C +85°C +25° Reverse Voltage V ...