NTE393(PNP) NTE, NTE393(PNP) Datasheet
NTE393(PNP)
Manufacturer Part Number
NTE393(PNP)
Description
Silicon Complementary Transistors General Purpose
Manufacturer
NTE
Datasheet
1.NTE393PNP.pdf
(2 pages)
www.DataSheet4U.com
Description:
The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package
designed for general purpose power amplifier and switching applications.
Features:
D 25A Collector Current
D Low Leakage Current: I
D Excellent DC Gain: h
D High Current Gain Bandwidth Product: h
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Continuous Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Unclamped Inductive Load, E
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. Pulse Test: Pulse Width = 10ms, Duty Cycle
Continuous
Peak (Note 1)
Derate Above 25 C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
FE
C
CB
NTE392 (NPN) & NTE393 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
CEO
= 40 Typ @ 15A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
= 1mA @ V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
fe
thJA
= 3 Min @ I
= 60V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10%.
C
= 1A, f = 1MHz
–65 to +150 C
–65 to +150 C
35.7 C/W
1.0 C/W
1W/ C
125W
90mJ
100V
100V
25A
40A
5V
5A
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NTE393(PNP) Summary of contents
Page 1
... Description: The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications. Features: D 25A Collector Current D Low Leakage Current Excellent DC Gain High Current Gain Bandwidth Product: h Absolute Maximum Ratings: Collector– ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Collector–Emitter Sustaining Voltage V Collector–Emitter Cutoff Current Emitter–Base Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage www.DataSheet4U.com Base–Emitter ON Voltage Dynamic Characteristics Small–Signal Current Gain Current–Gain Bandwidth Product Note 2. ...