MT5C1008 ASI, MT5C1008 Datasheet

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MT5C1008

Manufacturer Part Number
MT5C1008
Description
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS
Manufacturer
ASI
Datasheet

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128K x 8 SRAM
WITH DUAL CHIP ENABLE
AVAILABLE AS MILITARY
•SMD 5962-89598
•MIL-STD-883
FEATURES
• High Speed: 12, 15, 20, 25, 35, 45, 55 and 70 ns
• Battery Backup: 2V data retention
• Low power standby
• High-performance, low-power CMOS process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE1\, CE2, and OE\
• All inputs and outputs are TTL compatible
OPTIONS
• Timing
• Package(s)•
• 2V data retention/low power
MT5C1008
Rev. 6.5 7/02
SPECIFICATIONS
options.
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
Ceramic DIP (400 mil)
Ceramic DIP (600 mil)
Ceramic LCC
Ceramic LCC
Ceramic Flatpack
Ceramic SOJ
Ceramic SOJ
*Electrical characteristics identical to those provided for the 45ns
access devices.
For more products and information
www.austinsemiconductor.com
please visit our web site at
Austin Semiconductor, Inc.
MARKING
-12 (contact factory)
-15
-20
-25
-35
-45
-55*
-70*
C
CW
EC
ECA
F
DCJ
SOJ
L
No. 111
No. 112
No. 207
No. 208
No. 303
No. 501
No. 507
1
GENERAL DESCRIPTION
CMOS designs using a four-transistor memory cell, and are
fabricated using double-layer metal, double-layer polysilicon
technology.
applications, this device offers dual chip enables (CE1\, CE2)
and output enable (OE\). These control pins can place the
outputs in High-Z for additional flexibility in system design.
All devices operate from a single +5V power supply and all
inputs and outputs are fully TTL compatible.
enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH.
Reading is accomplished when WE\ and CE2 remain HIGH and
CE1\ and OE\ go LOW. The devices offer a reduced power
standby mode when disabled, allowing system designs to
achieve low standby power requirements.
ducing current consumption to 1mA maximum.
DQ1 13
DQ2 14
DQ3 15
A16
A14
A12
V
NC
A7
A6
A5
A4
A3
A2 10
A1 11
A0 12
SS
DQ1
DQ2
DQ3
A16
A14
A12
16
V
1
2
3
4
5
6
7
8
9
NC
A7
A6
A5
A4
A3
A2
A1
A0
32-Pin CSOJ (SOJ)
32-Pin DIP (C, CW)
SS
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
32-Pin Flat Pack (F)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
The MT5C1008 SRAM employs high-speed, low power
For design flexibility in high-speed memory
Writing to these devices is accomplished when write
The “L” version offers a 2V data retention mode, re-
PIN ASSIGNMENT
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
A15
CE2
WE\
A13
A8
A9
A11
OE\
A10
CE\
DQ8
DQ7
DQ6
DQ5
DQ4
CC
(Top View)
32 V
31 A15
30 CE2
29 WE\
28 A13
27 A8
26 A9
25 A11
24 OE\
23 A10
22 CE\
21 DQ8
20 DQ7
19 DQ6
18 DQ5
17 DQ4
CC
DQ1
DQ2
DQ3
A16
A14
A12
NC
V
A7
A6
A5
A4
A3
A2
A1
A0
SS
32-Pin SOJ (DCJ)
DQ1
32-Pin LCC (EC)
32-Pin LCC (ECA)
A7
A6
A5
A4
A3
A2
A1
A0
MT5C1008
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
10
11
12
13
5
6
7
8
9
14 15 16 17 18 19 20
4 3 2 1 32 31 30
SRAM
SRAM
SRAM
SRAM
SRAM
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
29
28
27
26
25
24
23
22
21
WE
A13
A8
A9
A11
OE
A10
CE1
DQ8
CE2
WE\
DQ8
DQ7
DQ6
DQ5
DQ4
A15
A13
A11
OE\
A10
CE\
V
A8
A9
CC
\
\
\

Related parts for MT5C1008

MT5C1008 Summary of contents

Page 1

... DQ1 13 DQ2 14 DQ3 GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. No. 111 For design flexibility in high-speed memory No. 112 applications, this device offers dual chip enables (CE1\, CE2) No ...

Page 2

... CE2 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 SRAM SRAM SRAM SRAM SRAM MT5C1008 (LSB) POWER DOWN WE\ DQ POWER X HIGH-Z STANDBY X HIGH-Z STANDBY H Q ACTIVE H HIGH-Z ACTIVE L D ACTIVE DQ8 ...

Page 3

... SS SBC CONDITIONS SYM 1MHz Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 SRAM SRAM SRAM SRAM SRAM MT5C1008 MIN MAX UNITS 2 -0.5 0.8 V -10 10 µA -10 10 µA 2.4 V 0.4 V MAX -15 -20 -25 ...

Page 4

... LZWE HZWE Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 SRAM SRAM SRAM SRAM SRAM MT5C1008 -25 -35 - ...

Page 5

... V > CDR V DR <V + 0.2V SS Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 SRAM SRAM SRAM SRAM SRAM MT5C1008 +5V 480 Q 30 255 Fig. 2 Output Load Equivalent Equivalent t t LZCE, and HZWE is less than t t HZOE is less than LZOE. MIN ...

Page 6

... VALID tAA tOH READ CYCLE NO. 2 tRC tRC tAOE tLZOE tACE DATA VALID tPU Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 SRAM SRAM SRAM SRAM SRAM MT5C1008 8, 9 DATA VALID 7, 8, 10, 12 tHZOE tHZCE tPD ...

Page 7

... DATA VAILD HIGH Z WRITE CYCLE NO. 2 (Write Enabled Controlled) tWC tWC tAW tCW tCW tWP1 tWP1 DATA VALID HIGH-Z Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 SRAM SRAM SRAM SRAM SRAM MT5C1008 12 12, 13 tAH tDH ...

Page 8

... BSC 0.125 0.150 0.015 --- 0.005 0.005 Either configuration in detail A is allowed on SMD. Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 SRAM SRAM SRAM SRAM SRAM MT5C1008 MAX 0.232 0.023 0.065 0.015 1.700 0.405 0.420 ...

Page 9

... Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM SRAM SRAM SRAM SRAM MT5C1008 MAX 0.111 0.020 0.055 0.011 1.615 0.605 0.610 0.110 0.060 0.175 ...

Page 10

... BSC 0.012 REF 0.070 0.090 0.003 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 SRAM SRAM SRAM SRAM SRAM MT5C1008 See Detail MAX 0.100 0.028 0.022 --- 0.840 0.408 0.080 0.110 0.015 ...

Page 11

... D 0.442 D1 0.300 BSC E 0.540 E1 0.400 BSC e 0.050 BSC L 0.045 L1 0.075 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11 SRAM SRAM SRAM SRAM SRAM MT5C1008 See Detail MAX 0.120 0.028 0.014 --- 0.458 0.560 0.055 0.095 ...

Page 12

... BSC 0.250 0.026 --- 0.000 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 12 SRAM SRAM SRAM SRAM SRAM MT5C1008 Pin 1 Index Bottom View A Q MAX 0.125 0.019 0.009 0.830 0.420 0.450 --- --- 0 ...

Page 13

... SMD SPECIFICATIONS MIN 0.132 0.026 0.030 0.015 0.812 0.740 0.405 0.435 0.360 0.050 BSC Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 13 SRAM SRAM SRAM SRAM SRAM MT5C1008 MAX 0.144 0.036 0.040 0.019 0.828 0.760 0.415 0.445 0.380 ...

Page 14

... SRAM SRAM SRAM MT5C1008 ...

Page 15

... MT5C1008 F -35 MT5C1008 F -45 MT5C1008 F -55 MT5C1008 F -70 *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing ** OPTIONS Data Retention/Low Power MT5C1008 Rev. 6.5 7/02 ORDERING INFORMATION EXAMPLE: MT5C1008ECA-25L/XT Device Options** Process Number L /* MT5C1008 L /* MT5C1008 L /* MT5C1008 L /* MT5C1008 L /* MT5C1008 L /* ...

Page 16

... MT5C1008ECA-25/883C 5962-8959820MXA MT5C1008ECA-25L/883C 5962-8959836MXA MT5C1008ECA-35/883C 5962-8959819MXA MT5C1008ECA-35L/883C 5962-8959835MXA MT5C1008ECA-45/883C 5962-8959818MXA MT5C1008ECA-45L/883C 5962-8959834MXA MT5C1008ECA-55/883C 5962-8959817MXA MT5C1008ECA-55L/883C 5962-8959833MXA MT5C1008ECA-70/883C MT5C1008ECA-70L/883C 5962-8959816MXA ASI Package Designator DCJ & SOJ ASI Part # SMD Part # MT5C1008DCJ-20/883C 5962-8959838MTA MT5C1008DCJ-20L/883C 5962-8959821MTA MT5C1008DCJ-25/883C 5962-8959837MTA ...

Page 17

... This product fully meets and is tested in compliance with SMD# 5962-89598 and tested in accordance with JESD78. Specific Product Affected: Die Manufacturer: Alliance Semiconductor Corporation Die Name: AS2008SA Device Types: MT5C1008 , MT5C1009 Speed Grades: All Package Designators: All Identifying Date Code Marking: Change implemented on product starting with date code 0100. Characteristic Identified: Austin Semiconductor, Inc. has received notification from this die vendor, Alliance Semiconductor Corp., that operation at high Vcc’ ...

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