SST5115 Micross, SST5115 Datasheet
SST5115
Manufacturer Part Number
SST5115
Description
Switching
Manufacturer
Micross
Datasheet
1.SST5115.pdf
(1 pages)
SST5115 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SST5115 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SST5115 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SST5115 SWITCHING CIRCUIT PARAMETERS
SST5115 Benefits:
Micross Components Europe
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
This analog switch is designed for inverting switching
into inverting input of an Operational Amplifier.
The SOT-23 provides a low cost option and ease of
manufacturing.
(See Packaging Information).
SST5115 Applications:
Note 1 ‐ Absolute maximum ratings are limiting values above which SST5115 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
SYMBOL
SYMBOL
SYMBOL
V
V
r
r
BV
V
I
t
t
I
DS(on)
DS(on)
V
GS(off)
DS(on)
I
I
D(off)
C
V
D(on)
C
d(on)
d(off)
g
GS(F)
g
e
R
DSS
GSS
R
I
t
t
G
iss
rss
DD
GG
os
GSS
fs
r
f
n
G
L
www.DataSheet4U.com
Low On Resistance
I
Switches directly from TTL logic
Analog Switches
Commutators
Choppers
D(off)
Click To Buy
Linear Systems replaces discontinued Siliconix SST5115
≤ 500 pA
Drain to Source Saturation Current (Note 2)
Gate to Source Breakdown Voltage
910Ω
220Ω
‐7mA
12V
‐6V
Gate to Source Forward Voltage
Drain to Source On Resistance
Drain to Source On Resistance
Gate to Source Cutoff Voltage
Reverse Transfer Capacitance
Drain to Source On Voltage
Forward Transconductance
Turn On Rise Time
Turn Off Fall Time
Equivalent Noise Voltage
CHARACTERISTIC
Gate Operating Current
Turn Off Time
Gate Reverse Current
Turn On Time
Output Conductance
Drain Cutoff Current
Input Capacitance
CHARACTERISTIC
CHARACTERISTIC
Tel: +44 1603 788967
Email:
Web:
Available Packages:
SST5115 in SOT-23
SST5115 in bare die.
Please contact Micross for full
package and die dimensions
http://www.micross.com/distribution
chipcomponents@micross.com
P-CHANNEL JFET
10
20
30
8
SST5115
MIN
MIN
‐15
30
UNITS
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
FEATURES
DIRECT REPLACEMENT FOR SILICONIX SST5115
LOW ON RESISTANCE
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain Voltage
Gate to Source Voltage
3
ns
TYP.
TYP.
‐0.7
‐1.0
‐0.7
‐0.5
‐10
‐10
‐10
4.5
20
20
20
‐5
‐‐
‐‐
‐‐
‐‐
‐‐
5
5
6
6
SOT-23 (Top View)
MAX
MAX
‐500
‐0.8
500
100
100
‐60
25
‐1
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
6
7
nV/√Hz
UNITS
UNITS
mA
mS
pA
µS
pF
V
Ω
Ω
See Switching Circuit
CONDITIONS
V
V
GS
GS
(L) = ‐7V
(H) = 0V
V
V
V
V
DG
DS
V
V
I
DS
D
DS
DS
DS
= ‐15V, I
= 10V, I
= 0A, V
= ‐15V, V
= 0V, V
V
= 0V, V
= 0V, V
V
V
V
I
I
SWITCHING TEST CIRCUIT
V
V
V
V
V
V
DS
I
G
D
DS
DS
GS
G
DS
DS
DS
GS
GS
GS
= ‐1mA, V
= ‐1mA, V
= ‐15V, I
= 1µA, V
= ‐15V, V
= ‐15V, I
= 0V, I
= ‐15V, V
= ‐15V, V
= ‐15V, V
CONDITIONS
CONDITIONS
= 0V, I
= 0V, I
= 20V, V
GS
GS
D
GS
GS
D
= 10mA , f = 1kHz
GS
= 1mA , f = 1kHz
= 0V, f = 1kHz
= 12V, f = 1MHz
‐55°C to +200°C
‐55°C to +200°C
= 7V, f = 1MHz
= 5V, f = 1MHz
D
= 0V, f = 1MHz
r
D
D
= ‐15mA
DS(on)
I
V
= ‐7mA
= ‐3mA
V
D
D
G
DS
GS
500mW
DS
= ‐1mA
= ‐50mA
GDS
GSS
= ‐1nA
DS
GS
GS
GS
GS
= 0V
= 0V
= 12V
6pF
= 0V
= 0V
= 0V
= 7V
= 5V
= 30V
= 30V
≤ 100Ω