2SD1609 UTC, 2SD1609 Datasheet
2SD1609
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2SD1609 Summary of contents
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... UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * Low frequency high voltage amplifier ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation (T =25°C) a Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS PARAMETER Collector-Base Voltage ...
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... UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR CHARACTERISTICS CURVE UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R204-008,A ...
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... UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR Current Gain & Collector Current 1000 V =5V CE 100 10 0 100 Collector Current (mA) On Voltage & Collector Current 10000 1000 V @Vc =5V BE(on) E 100 0 100 Collector Current (mA) Capacitance& Reverse-Biased Voltage 10 Cob 100 0.1 Reverse Biased Voltage(V) UTC UNISONIC TECHNOLOGIES CO ...
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... UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein ...