2SD882ANL UTC, 2SD882ANL Datasheet

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2SD882ANL

Manufacturer Part Number
2SD882ANL
Description
MEDIUM POWER LOW VOLTAGE TRANSISTOR
Manufacturer
UTC
Datasheet
UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SB772ANL
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation
Collector current(DC)
Collector current(PULSE)
Base current
Junction Temperature
Storage Temperature
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
UTC
APPLICATIONS
ELECTRICAL CHARACTERISTICS
Collector-emitter saturation voltage
Current gain bandwidth product
Base-emitter saturation voltage
Collector cut-off current
DC current gain(note 1)
Emitter cut-off current
Output capacitance
PARAMETER
PARAMETERS
UNISONIC TECHNOLOGIES CO. LTD
SYMBOL
V
V
CE
BE
I
h
h
I
Cob
CBO
EBO
FE1
FE2
f
(sat)
(sat)
T
(Ta=25°C )
SYMBOL
(Ta=25°C,unless otherwise specified)
www.DataSheet4U.com
V
V
V
T
Pc
CBO
CEO
EBO
STG
Ic
Ic
I
T
B
j
V
TEST CONDITIONS
CB
V
V
=10V,I
CE
V
V
Ic=2A,I
Ic=2A,I
CE
V
CB
CE
EB
=2V,Ic=20mA
=5V,Ic=0.1A
=30V,I
=2V,Ic=1A
=3V,Ic=0
*Pb-free plating product number: 2SD882ANLK
E
B
B
=0,f=1MHz
=0.2A
=0.2A
E
=0
1:EMITTER 2:COLLECTOR 3:BASE
-55 ~ +150
RATINGS
1
150
0.6
40
30
1
3
7
5
MIN
100
30
TYP
200
150
0.3
1.0
80
45
TO-92NL
MAX
1000
1000
UNIT
400
0.5
2.0
QW-R211-016,B
°C
°C
W
V
V
V
A
A
A
UNIT
MHz
nA
nA
pF
V
V
1

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2SD882ANL Summary of contents

Page 1

... UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output *Low saturation voltage *Complement to 2SB772ANL APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator ABSOLUTE MAXIMUM RATINGS PARAMETERS Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation Collector current(DC) ...

Page 2

... UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION OF hFE2 RANK RANGE 100-200 TYPICAL PARAMETERS PERFORMANCE Fig.1 Static characteristics 1.6 I =9mA B I =8mA B I =7mA B 1.2 I =6mA B I =5mA B 0.8 I =4mA B I =3mA B 0.4 I =2mA B I =1mA Collector-Emitter voltage (V) Fig.4 Collector Output ...

Page 3

... UTC 2SD882ANL NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein ...

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