2SC1008

Manufacturer Part Number2SC1008
DescriptionTRANSISTOR NPN
ManufacturerETC
2SC1008 datasheet
 
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TO-92 Plastic-Encapsulate Transistors
2SC1008
TRANSISTOR(NPN )
FEATURES
Power dissipation
P
:
0.8
CM
Collector current
I
:
0.7
CM
Collector-base voltage
V
: 80
(BR)CBO
Operating and storage junction temperature range
,T
T
: -55℃ to +150℃
J
stg
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF h
FE
Rank
Range
DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.
TEL 86-769-5335378 86-769-5305266
W(Tamb=25℃)
A
V
unless otherwise specified)
Symbol
Test
Ic= 100μA , I
V(BR)
CBO
V(BR)
I
= 10mA , I
CEO
C
I
= 10μA, I
V(BR)
E
EBO
I
V
=60 V , I
CBO
CB
I
V
= 5 V ,
EBO
EB
h
V
= 2 V, I
FE
CE
V
I
= 500mA, I
CE(sat)
C
V
I
=500mA, I
BE(sat)
C
f
V
=10V, I
T
CE
R
O
40-80
70-140
FEX 86-769-5316189
TO—92
1.EMITTER
2. BASE
3. COLLECTOR
1 2 3
conditions
MIN
TYP
=0
80
E
=0
60
B
=0
8
C
=0
E
I
=0
C
=50m A
40
C
=50 mA
B
=50m A
B
= 50mA
30
C
Y
120-240
MAX
UNIT
V
V
  V
 μA
0.1
 μA
0.1
400
0.4
V
1.1
V
MHz
G
200-400

2SC1008 Summary of contents

  • Page 1

    ... TO-92 Plastic-Encapsulate Transistors 2SC1008 TRANSISTOR(NPN ) FEATURES Power dissipation P : 0.8 CM Collector current I : 0.7 CM Collector-base voltage (BR)CBO Operating and storage junction temperature range , -55℃ to +150℃ J stg ELECTRICAL CHARACTERISTICS(Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage ...

  • Page 2

    ...

  • Page 3

    TO-92 PACKAGE OUTLINE DIMENSIONS D e Symbol Ö Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.400 4.700 3.430 4.300 4.700 1.270TYP 2.440 ...