STD12N06L ST Microelectronics, STD12N06L Datasheet

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STD12N06L

Manufacturer Part Number
STD12N06L
Description
N-CHANNEL POWER MOSFET
Manufacturer
ST Microelectronics
Datasheet

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Part Number:
STD12N06L
Manufacturer:
ST
Quantity:
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Part Number:
STD12N06L
Manufacturer:
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Part Number:
STD12N06LT4
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APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
November 1996
STD12N05L
STD12N06L
Symbol
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW GATE CHARGE
LOGIC LEVEL COMPATIBLE INPUT
175
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
I
V
D M
V
V
T
P
DG R
I
I
T
D S
GS
stg
D
D
tot
TYPE
( )
j
o
C OPERATING TEMPERATURE
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
DS(on)
LOW THRESHOLD POWER MOS TRANSISTOR
V
50 V
60 V
= 0.115
DSS
< 0.15
< 0.15
Parameter
R
DS( on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
12 A
12 A
= 25
= 100
I
D
o
C
o
C
o
C
INTERNAL SCHEMATIC DIAGRAM
STD12N05L
(Suffix ”-1”)
TO-251
IPAK
50
50
-65 to 175
Value
1
175
0.3
12
48
45
8
15
2
STD12N05L
STD12N06L
3
STD12N06L
60
60
(Suffix ”T4”)
TO-252
DPAK
1
W/
3
Unit
o
o
W
V
V
V
A
A
A
C
C
o
1/10
C

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STD12N06L Summary of contents

Page 1

... TO-251 (Suffix ”-1”) INTERNAL SCHEMATIC DIAGRAM STD12N05L = 100 STD12N05L STD12N06L DPAK TO-252 (Suffix ”T4”) Value Unit STD12N06L 0 -65 to 175 C o 175 C 1/10 ...

Page 2

... max, < 1%) max, < 1 unless otherwise specified) case Test Conditions I = 250 for STD12N05L for STD12N06L V = Max Rating Max Rating x 0 125 Test Conditions = 250 ...

Page 3

... GS (see test circuit, figure 5) Test Conditions di/dt = 100 150 (see test circuit, figure 5) Thermal Impedance STD12N05L/STD12N06L Min. Typ. Max. Unit 180 260 ns 120 Min. Typ. Max. Unit ...

Page 4

... STD12N05L/STD12N06L Derating Curve Transfer Characteristics Static Drain-source On Resistance 4/10 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage ...

Page 5

... Capacitance Variations Normalized On Resistance vs Temperature Turn-off Drain-source Voltage Slope STD12N05L/STD12N06L Normalized Gate Threshold Voltage vs Temperature Turn-on Current Slope Cross-over Time 5/10 ...

Page 6

... STD12N05L/STD12N06L Switching Safe Operating Area Source-drain Diode Forward Characteristics Fig. 1: Unclamped Inductive Load Test Circuits 6/10 Accidental Overload Area Fig. 2: Unclamped Inductive Waveforms ...

Page 7

... Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time STD12N05L/STD12N06L Fig. 4: Gate Charge Test Circuit 7/10 ...

Page 8

... STD12N05L/STD12N06L TO-251 (IPAK) MECHANICAL DATA DIM. MIN. TYP. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 8/10 mm MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.3 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 0 inch TYP. MAX. 0.094 0.043 0.051 ...

Page 9

... TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. A 2.2 A1 0.9 A2 0.03 B 0.64 B2 5.2 C 0. 6.4 G 4.4 H 9.35 L2 0.8 L4 0.6 H DETAIL ”A” STD12N05L/STD12N06L MAX. MIN. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 1 0.023 DETAIL ”A” L4 inch TYP. MAX. 0.094 0.043 0.009 ...

Page 10

... STD12N05L/STD12N06L Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequ ences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...

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