STD150NH02L ST Microelectronics, STD150NH02L Datasheet

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STD150NH02L

Manufacturer Part Number
STD150NH02L
Description
N-CHANNEL POWER MOSFET
Manufacturer
ST Microelectronics
Datasheet

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DESCRIPTION
The STD150NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This
novel 0.6
techniques that couple to a "bondless" assembly
technique result in outstanding performance with
standard DPAK outline. It is therefore ideal in high
performance
efficiency it to be achieved at very high out currents.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
September 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STD150NH02L
TYPICAL R
TYPICAL R
R
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
LOW THRESHOLD DEVICE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
SURFACE-MOUNTING POWER PACKAGE
IN TAPE & REEL (SUFFIX “T4”)
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
Symbol
V
E
DS(ON)
V
I
spike(1)
DM (2)
V
V
P
AS (3)
T
DGR
I
I
T
GS
stg
DS
TYPE
D
D
tot
j
process utilizes also unique metallization
* Qg INDUSTRY’s BENCHMARK
DC-DC
Drain-source Voltage Rating
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
DS
(on) = 0.003
(on) = 0.005
N-CHANNEL 24V - 0.003
V
24 V
DSS
converter
Parameter
< 0.0035
R
DS(on)
@ 10 V
@ 5 V
applications
C
GS
= 25°C
GS
= 20 k )
= 0)
C
C
150 A
= 25°C
= 100°C
I
D
where
STripFET™ III POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
(Suffix “-1”)
TO-251
- 150A ClipPAK™/IPAK
IPAK
-55 to 175
Value
± 20
0.83
150
600
125
900
30
24
24
95
STD150NH02L
1
2
3
PRELIMINARY DATA
(Suffix “T4”)
ClipPak™
1
W/°C
Unit
mJ
3
°C
W
V
V
V
V
A
A
A
1/9

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STD150NH02L Summary of contents

Page 1

... PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING POWER PACKAGE IN TAPE & REEL (SUFFIX “T4”) DESCRIPTION The STD150NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This novel 0.6 process utilizes also unique metallization techniques that couple to a "bondless" assembly technique result in outstanding performance with standard DPAK outline ...

Page 2

... STD150NH02L THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (4) ON Symbol Parameter ...

Page 3

... STD150NH02L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Turn-on Delay Time t d(on) Rise Time Total Gate Charge g Q Gate-Source Charge gs Gate-Drain Charge Q gd oss (5) Q Output Charge gls (6) Q Third-quadrant Gate Charge SWITCHING OFF Symbol Parameter t Turn-off Delay Time d(off) Fall Time ...

Page 4

... STD150NH02L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 4/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 5

... STD150NH02L TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 TYP. MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.3 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 0 inch TYP. MAX. 0.094 0.043 0.051 ...

Page 6

... STD150NH02L TO-252 (DPAK) MECHANICAL DATA DIM. MIN. A 2.2 A1 0.9 A2 0.03 B 0.64 B2 5.2 C 0. 6.4 G 4 0.6 L2 6/9 mm TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 0 DETAIL "A" inch MIN. TYP. MAX. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.019 0.023 0.236 ...

Page 7

... STD150NH02L Buck Converter: Power Losses Estimation The power losses associated with the FETs in a Synchronous Buck converter can be estimated using the equations shown in the table below. The formulas give a good approximation, for the sake of performan ce comparison, of how different pairs of devices affect the converter efficiency. However a very important parameter, the working temperature, is not considered ...

Page 8

... STD150NH02L P conduction P switching Recovery P diode Conduction P gate Qoss Parameter d Q gsth Q gls Pconduction Pswitching Pdiode Pgate P Qoss 1 Dissipated by SW1 during turn-on 8/9 High Side Switch (SW1 DS(on)SW1 gsth(SW1) gd(SW1) Not Applicable Not Applicable g(SW1 ...

Page 9

... STD150NH02L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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