STD1NB80 ST Microelectronics, STD1NB80 Datasheet
STD1NB80
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STD1NB80 Summary of contents
Page 1
... DS(on INTERNAL SCHEMATIC DIAGRAM Parameter = 100 STD1NB80 MOSFET PRELIMINARY DATA IPAK DPAK TO-251 TO-252 (Suffix "-1") (Suffix "T4") Value 800 800 0.4 4.5 -65 to 150 150 di/dt 200 ...
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... STD1NB80 THERMAL DATA R Thermal Resistance Junction-case thj-case Thermal Resistance Junction-ambient Rthj-amb Thermal Resistance Case-Sink Rthc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T ...
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... Test Conditions V = 640 1 4 Test Conditions 1.1 A di/dt = 100 100 150 STD1NB80 Min. Typ. Max. Unit Min. Typ. Max. Unit Min. ...
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... STD1NB80 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 4/6 mm TYP. MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.3 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 0 inch TYP. MAX. 0.094 0.043 0.051 ...
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... H 9.35 L2 0.8 L4 0.6 H DETAIL "A" MAX. MIN. 2.4 0.086 1.1 0.035 0.23 0.001 0.9 0.025 5.4 0.204 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 10.1 0.368 1 0.023 L4 STD1NB80 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397 0.031 0.039 DETAIL "A" 0068772-B 5/6 ...
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... STD1NB80 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...