TLP590B Toshiba, TLP590B Datasheet

no-image

TLP590B

Manufacturer Part Number
TLP590B
Description
TOSHIBA Photocoupler GaALAs Ired & Photo Diode Array
Manufacturer
Toshiba
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TLP590B
Manufacturer:
TOSHIBA
Quantity:
101
Part Number:
TLP590B
Manufacturer:
TOS
Quantity:
5 510
Part Number:
TLP590B
0
Company:
Part Number:
TLP590B
Quantity:
10 000
Telecommunication
Programmable Controllers
Mos Gate Driver
MOS FET Gate Driver
The TOSHIBA TLP590B consists of an aluminum galium arsenide
infrared emitting diode optically coupled to a series connected photo
diode array in a six lead plastic DIP package.
TLP590B is suitable for MOS FET gate driver.
·
Short Current
Maximum Ratings
(Note 1)
TLP590B
UL recognized: UL1577, file No. E67349
Storage temperature range
Operating temperature range
Lead soldering temperature
(10sec.)
Isolation voltage
(AC, 1 min., R.H. ≤ 60%)
Name
(Note) Application type name for certification test, please
Type
Forward current
Forward current derating
(Ta ≥ 25°C)
Pulse forward current
(100µs pulse, 100 pps)
Reverse voltage
Junction temperature
Foward current
Reverse voltage
Junction temperature
use standard product type name, i.e.
TLP590B(C20): TLP590B
Characteristics
shorted together, and pins 4 and 6 shorted together.
Device considered a two terminal device: Pins 1, 2 and 3
Classification
Standard
C20
TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array
(Ta = 25°C)
(Note 1)
20µA
12µA
(min.)
Short Current
∆I
Symbol
V
T
BV
T
T
10mA
F
I
I
V
FD
I
FP
T
T
opr
RD
stg
sol
F
/ °C
R
I
j
j
TLP590B
F
S
Classification
Marking Of
20, blank
-55~125
-40~85
Rating
2500
-0.5
125
125
260
20
50
50
10
1
3
1
mA / °C
Vrms
Unit
mA
°C
µA
°C
°C
°C
°C
A
V
V
Pin Configuration(top view)
Weight: 0.39g
TOSHIBA
1
2
3
1. : Anode
2. : Cathode
3. : NC
4. : Cathode
6. : Anode
11−7A9
2002-09-25
TLP590B
Unit in mm
6
4

Related parts for TLP590B

TLP590B Summary of contents

Page 1

... Programmable Controllers Mos Gate Driver MOS FET Gate Driver The TOSHIBA TLP590B consists of an aluminum galium arsenide infrared emitting diode optically coupled to a series connected photo diode array in a six lead plastic DIP package. TLP590B is suitable for MOS FET gate driver. ...

Page 2

... AC, 1 second in oil S DC, 1 minute in oil (Ta = 25°C) Symbol Test Condition 20mA =1000pF L t off V OUT OUT 0V 2 TLP590B Max. Unit ― 85 °C Min. Typ. Max. 1.2 1.4 — — — 30 — 7 — 1 — — Min. Typ. Max. 7.0 8.0 ...

Page 3

... Forward voltage V F (V) -4.0 -3.6 -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 100 80 0.1 5000 3000 1000 500 300 100 2.0 2.2 3 TLP590B V Ta – I ∆ / ∆ 0.3 0 Forward current I (mA – Pulse width ≤ 100µ 25° Duty cycle ratio D R ...

Page 4

... TLP590B OFF – =2.4MΩ OFF t ON 1MΩ 510kΩ 25°C 300kΩ 20mA I F =20mA V OUT 300kΩ 510kΩ ...

Page 5

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 TLP590B 000707EBC 2002-09-25 ...

Related keywords