MMBT2222LT Rectron Limited, MMBT2222LT Datasheet - Page 2

• Manufacturer Part Number: MMBT2222LT
• Description: Npn Silicon Planar Transistor
• Manufacturer: Rectron Limited

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
NOTES : 2. Pulse Test: Pulse Width < 300 s,Duty Cycle < 2.0%
Collector-Emitter Breakdown Voltage (I C = 10mAdc, I B = 0)
Collector-Base Breakdown Voltage (I C = 10 Adc, I E = 0)
Emitter-Base Breakdown Voltage (I E = 10 Adc, I C = 0)
Collector Cutoff Current (V CE = 60Vdc,V EB(off) = 3.0Vdc
Collector Cutoff Current (V CB = 60Vdc, I E = 0)
DC Current Gain (I C = 0.1mAdc, V CE = 10Vdc)
Collector-Emitter Saturation Voltage (2) (I C = 150mAdc, I B = 15mAdc)
Base-Emitter Saturation Voltage (2) (I C = 150mAdc, I B = 15mAdc)
Current-Gain-Bandwidth Product (3) (I C = 20mAdc, V CE = 20Vdc, f= 100MHz)
Input Capacitance (V EB =0.5Vdc, I C = 0, f= 1.0MHz)
3. f
T
is defined as the frequency at which |h fe | extrapolates to unity
(I C = 1.0mAdc, V CE = 10Vdc)
(I C = 10mAdc, V CE = 10Vdc)
(I C = 150mAdc, V CE = 10Vdc) (2)
(I C = 500mAdc, V CE = 10Vdc) (2)
(V CB = 60Vdc, I E = 0, TA= 125
-
Chatacteristic
(I C = 500mAdc, I B = 50mAdc)
(I C = 500mAdc, I B = 50mAdc)
(@TA=25
-
O
C unless otherwise noted)
O
C)
V (BR)CEO
V (BR)CBO
V (BR)EBO
Symbol
V CE(sat)
V BE(sat)
I CBO
I CEX
C ibo
hFE
f T
Min
250
100
30
60
5.0
35
50
75
30
-
-
-
-
-
-
-
-
RECTRON
Max
0.01
0.1
0.4
1.6
1.3
2.6
30
10
-
-
-
-
-
-
-
-
-
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Adc
pF
-