IRF1010N International Rectifier, IRF1010N Datasheet - Page 2

• Manufacturer Part Number: IRF1010N
• Description: Power MOSFET(Vdss=55V/ Rds(on)=11mohm/ Id=85A)
• Manufacturer: International Rectifier

Source-Drain Ratings and Characteristics
IRF1010N
Electrical Characteristics @ T
Notes:
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
E
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
V
2
fs
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
AS
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
Starting T
G
= 25 , I
/ T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 270µH
AS
= 43A, V
GS
Parameter
Parameter
=10V (See Figure 12)
J
= 25°C (unless otherwise specified)
I
Pulse width
This is a typical value at device destruction and represents
This is a calculated value limited to T
Calculated continuous current based on maximum allowable
T
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1030 250
SD
operation outside rated limits.
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
32
–––
55
–––
–––
–––
–––
–––
J
junction temperature. Package limitation current is 75A.
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
43A, di/dt
0.058 –––
3210 –––
–––
–––
–––
–––
–––
–––
–––
–––
690
–––
–––
–––
220
–––
––– -100
–––
140
4.5
13
76
48
39
7.5
69
–––
85
–––
–––
250
100
120
–––
–––
–––
–––
–––
–––
230
–––
100
4.0
400µs; duty cycle
1.3
19
11
25
41
290
210A/µs, V
V/°C
m
nC
nH
mJ
nC
µA
nA
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
I
showing the
p-n junction diode.
T
di/dt = 100A/µs
MOSFET symbol
T
integral reverse
D
D
AS
DD
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= 43A
= 43A
= 25°C, I
= 25°C, I
= 4.3A, L = 270µH
= 3.6
= 0V, I
= 10V, I
= V
= 25V, I
= 55V, V
= 44V, V
= 20V
= -20V
= 44V
= 10V, See Fig. 6 and 13
= 28V
= 10V, See Fig. 10
= 0V
= 25V
V
2%.
(BR)DSS
GS
J
, I
= 175°C .
D
S
F
D
D
D
Conditions
= 250µA
GS
GS
Conditions
= 43A
= 43A, V
,
= 43A
= 250µA
= 43A
= 0V
= 0V, T
D
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GS
= 1mA
J
= 150°C
= 0V
G
G
S
+L
D
D
S
S
)
D