IRF1010N International Rectifier, IRF1010N Datasheet - Page 4

• Manufacturer Part Number: IRF1010N
• Description: Power MOSFET(Vdss=55V/ Rds(on)=11mohm/ Id=85A)
• Manufacturer: International Rectifier

IRF1010N
4
6000
5000
4000
3000
2000
1000
1000
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.0
1
Drain-to-Source Voltage
T = 175 C
J
Ciss
Coss
V
Crss
V DS , Drain-to-Source Voltage (V)
SD
Forward Voltage
0.6
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
T = 25 C
J
1.2
10
°
f = 1 MHZ
1.8
V
GS
SHORTED
= 0 V
2.4
100
1000
100
10
20
16
12
Fig 8. Maximum Safe Operating Area
1
8
4
0
0
Fig 6. Typical Gate Charge Vs.
1
I =
D
Tc = 25°C
Tj = 175°C
Single Pulse
43A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
20
Q , Total Gate Charge (nC)
G
40
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
V
V
V
DS
DS
DS
60
= 44V
= 27V
= 11V
FOR TEST CIRCUIT
SEE FIGURE
1msec
100
10msec
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100µsec
80
100
13
1000
120