IRF4905 International Rectifier, IRF4905 Datasheet

IRF4905

Manufacturer Part Number

IRF4905

Description

Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)

Manufacturer

International Rectifier

Datasheet

1.IRF4905.pdf (8 pages)

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Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

Absolute Maximum Ratings

Thermal Resistance

dv/dt

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

P-Channel

Fully Avalanche Rated

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Parameter

@ -10V

Typ.

300 (1.6mm from case )

0.50

–––

HEXFET

10 lbf•in (1.1N•m)

-55 to + 175

TO-220AB

Max.

-260

-5.0

200

± 20

930

-74

-52

-38

1.3

IRF4905

Power MOSFET

DS(on)

Max.

0.75

–––

DSS

= -74A

PD - 9.1280C

= -55V

= 0.02

Units

°C/W

W/°C

V/ns

°C

8/25/97

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