IRF7493 International Rectifier, IRF7493 Datasheet

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IRF7493

Manufacturer Part Number
IRF7493
Description
HEXFET Power MOSFET
Manufacturer
International Rectifier
Datasheet

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Notes  through … are on page 9
www.irf.com
Applications
Benefits
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
J
STG
DS
GS
D
D
θJC
θJA
@ T
@ T
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
@T
Switching Losses
C
C
C
C
= 25°C
= 70°C
= 25°C
= 70°C
OSS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Lead
Junction-to-Ambient
to Simplify Design, (See
Parameter
Parameter
f
GS
GS
f
f
@ 10V
@ 10V
G
S
S
S
V
80V
DSS
1
2
3
4
Top View
Typ.
–––
–––
15m:@V
R
-55 to + 150
HEXFET
8
6
5
7
DS(on)
Max.
0.02
± 20
9.3
7.4
2.5
1.6
80
74
D
D
D
D
A
A
GS
max
Max.
=10V
®
20
50
IRF7493
Power MOSFET
SO-8
Qg (typ.)
35nC
Units
Units
W/°C
°C
W
V
A
1

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IRF7493 Summary of contents

Page 1

... Notes  through … are on page 9 www.irf.com V DSS 15m:@V 80V Top View @ 10V GS @ 10V Typ. ––– f ––– IRF7493 ® HEXFET Power MOSFET R max Qg (typ.) DS(on) =10V 35nC SO-8 Max. Units 80 V ± ...

Page 2

... IRF7493 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...

Page 3

... Fig 3. Typical Transfer Characteristics www.irf.com 100 10 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 9. 10V 1.5 1.0 0.5 5.0 6.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7493 3.5V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( 100 120 140 160 Junction Temperature (°C) Vs. Temperature 100 3 ...

Page 4

... IRF7493 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150°C 10.0 1 25°C 0.1 0.2 0.4 0.6 0 Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V DS 90% 125 150 10 d(on) Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) IRF7493 + - ≤ 1 ≤ 0 d(off 100 5 ...

Page 6

... IRF7493 0.013 0.012 10V 0.011 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. 50KΩ .2µF 12V .3µ D.U. 3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform ...

Page 7

... Waveform SD Reverse „ Recovery - + Current D.U.T. V Waveform DS Re-Applied G + Voltage - Inductor Curent ® HEXFET Power MOSFETs Qgd Qgodr Fig 17. Gate Charge Waveform IRF7493 P.W. Period D = Period V =10V GS Body Diode Forward Current di/dt Diode Recovery dv/ Body Diode Forward Drop I Ripple ≤ for N-Channel Id Vgs ...

Page 8

... IRF7493 SO-8 Package Details 0.25 [.010 NOT DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. ...

Page 9

... DS Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.7/03 IRF7493 12.3 ( .484 ) 11.7 ( .461 ) 14.40 ( .566 ) 12.40 ( .488 ) DSS TAC Fax: (310) 252-7903 ...

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