IRF7493 International Rectifier, IRF7493 Datasheet - Page 2

• Manufacturer Part Number: IRF7493
• Description: HEXFET Power MOSFET
• Manufacturer: International Rectifier

IRF7493
BV
∆ΒV
R
V
I
I
gfs
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
I
I
V
t
Q
Static @ T
Dynamic @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
GS(th)
AS
SD
DS(on)
iss
oss
rss
oss
oss
rss
g
gs
gd
rr
2
DSS
eff.
DSS
/∆T
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
J
= 25°C (unless otherwise specified)
Parameter
Ù
Parameter
Parameter
Ù
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
80
13
0.074
1510
1130
11.5
–––
–––
–––
–––
–––
–––
–––
320
130
210
320
–––
–––
–––
5.7
8.3
7.5
35
12
30
12
37
52
Typ.
-200
–––
––– mV/°C
250
200
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
9.3
1.3
15
20
53
74
56
78
mΩ
nC
µA
nA
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 5.6A
= 5.6A
= 25°C, I
= 25°C, I
= 6.2Ω
= 0V, I
= 10V, I
= V
= 80V, V
= 64V, V
= 20V
= -20V
= 15V, I
= 40V
= 10V
= 40V,
= 10V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
Max.
180
, I
5.6
D
Conditions
Conditions
D
S
F
DS
DS
DS
D
D
e
= 250µA
GS
GS
= 250µA
= 5.6A, V
= 5.6A, V
= 5.6A
= 5.6A
= 1.0V, ƒ = 1.0MHz
= 64V, ƒ = 1.0MHz
= 0V to 64V
= 0V
= 0V, T
e
www.irf.com
D
e
= 1mA
DD
J
GS
= 125°C
= 15V
= 0V
Units
g
mJ
A
e