IRF7501 International Rectifier, IRF7501 Datasheet
IRF7501
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IRF7501 Summary of contents
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... Date Code 505 or later . www.irf.com PRELIMINARY HEXFET 10V GS @ 10V GS - 150 240 (1.6mm from case 91265H IRF7501 ® Power MOSFET =20V DSS 0.135 DS(on) M icro 8 Max. Units 20 V 2.4 1 1.25 W ...
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... IRF7501 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... TOP 10 BOTTOM 1.5V 1 0.1 A 0.01 10 0.1 Fig 2. Typical Output Characteristics 150° 3.5 4 Fig 7. Typical Source-Drain Diode IRF7501 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V 1.5V 20µ 150° rain-to-S ource V oltage ( 25° ...
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... IRF7501 2 1.7A D 1.5 1.0 0.5 0.0 -60 -40 - Junction T em perature (° Fig 5. Normalized On-Resistance Vs. Temperature 0.13 0.11 0.09 0.07 0.05 4 0.8 0.6 0.4 0 4 100 120 140 160 Fig 6. Typical On-Resistance Vs. Drain ate -to-S o urc e V olta Fig 7. Typical On-Resistance Vs. Gate ...
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... 100 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7501 = 16V FIG Total G ate C harge ( Fig 9. Typical Gate Charge Vs. Gate-to-Source Voltage Notes: 1 ...
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... Part Marking Information IRF7501 example ...
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... ( ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 451 0111 Data and specifications subject to change without notice. IRF7501 . . ...