IRF7555 International Rectifier, IRF7555 Datasheet - Page 2

• Manufacturer Part Number: IRF7555
• Description: Power MOSFET(Vdss=-20V/ Rds(on)=0.055ohm)
• Manufacturer: International Rectifier

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Notes:
ƒ
Electrical Characteristics @ T
IRF7555
Source-Drain Ratings and Characteristics
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
d(on)
d(off)
r
f
SM
DSS
I
S
rr
V
fs
2
(BR)DSS
GS(th)
GSS
iss
oss
rss
SD
g
gs
gd
Repetitive rating; pulse width limited by
I
DS(on)
rr
T
Pulse width
max. junction temperature.
(BR)DSS
SD
J
150°C
-2.0A, di/dt
/ T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
300µs; duty cycle
-140A/µs, V
Parameter
Parameter
DD
2%.
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
-0.60 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
––– -0.005 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1066 –––
–––
–––
–––
–––
–––
–––
-20
2.5
–––
„
…
–––
––– 0.055
––– 0.105
–––
–––
–––
––– -100
–––
402
126
–––
–––
2.1
2.5
–––
10
10
46
60
64
54
41
Surface mounted on FR-4 board, t
R
Starting T
G
-1.2
-1.0
–––
–––
–––
100
–––
–––
–––
–––
–––
-25
-1.2
= 25 , I
3.1
3.7
-34
15
-1.3
82
61
V/°C
J
µA
nA
nC
ns
pF
nC
ns
= 25°C, L = 8.0mH
V
V
S
AS
V
A
= -3.0A.
V
V
V
R
V
ƒ = 1.0MHz
V
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
I
R
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = -100A/µs
integral reverse
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= -3.0A
= -2.0A
= 25°C, I
= 25°C, I
= 5.0
= 6.0
= V
= -10V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -10V, I
= -16V, V
= -16V, V
= -12V
= 12V
= -5.0V
= -10V
= 0V
GS
Conditions
, I
ƒ
D
S
F
D
= -250µA
Conditions
D
D
D
= -1.6A, V
= -2.5A
GS
= -250µA
GS
= -0.8A
= -4.3A
= -3.4A
ƒ
= 0V
= 0V, T
10sec.
D
www.irf.com
= -1mA
ƒ
ƒ
GS
J
= 125°C
G
= 0V
ƒ
S
D