IRF7755GPBF International Rectifier, IRF7755GPBF Datasheet

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IRF7755GPBF

Manufacturer Part Number
IRF7755GPBF
Description
Power MOSFET
Manufacturer
International Rectifier
Datasheet
www.DataSheet.in
Thermal Resistance
l
l
l
l
l
l
l
Absolute Maximum Ratings
Description
www.irf.com
HEXFET
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
V
I
I
I
P
P
V
T
R
D
D
DM
J
DS
D
D
GS
θJA
@ T
@ T
, T
Dual P-Channel MOSFET
Ultra Low On-Resistance
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Lead-Free
Halogen-Free
@T
@T
STG
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
®
Power MOSFETs from International Rectifier
Linear Derating Factor
Gate-to-Source Voltage
Maximum Junction-to-Ambient
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Junction and Storage Temperature Range
Parameter
Parameter
provides thedesigner

GS
GS
ƒ
ƒ
ƒ
@ -4.5V
@ -4.5V
!
"
!Ã2ÃT
"Ã2ÃT
Ã2Ã9
Ã2ÃB
V
-20V
DSS
IRF7755GPbF
HEXFET
'Ã2Ã9!
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51mΩ@V
86mΩ@V
R
-55 to +150
'
&
%
$
Max.
DS(on)
125
0.01
Max.
0.64
-3.9
-3.1
-20
-15
±20
1
®
GS
GS
Power MOSFET
max
= -4.5V
= -2.5V
TSSOP-8
PD- 96150A
-
-
3.7A
2.8A
W/°C
05/14/09
Units
Units
I
°C/W
D
°C
W
W
V
A
V
1

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IRF7755GPBF Summary of contents

Page 1

... Pulsed Drain Current ƒ Maximum Power Dissipation ƒ Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Parameter ƒ Maximum Junction-to-Ambient PD- 96150A IRF7755GPbF ® HEXFET Power MOSFET V R max DSS DS(on) -20V 51mΩ@V = -4.5V GS 86mΩ ...

Page 2

... IRF7755GPbF Electrical Characteristics @ T V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total Gate Charge ...

Page 3

... BOTTOM -1.5V -1.5V 20µs PULSE WIDTH Tj = 25° 100 ° ° -15V DS 20µs PULSE WIDTH 1.5 2.0 2.5 3.0 , Gate-to-Source Voltage (V) IRF7755GPbF 100 TOP 10 BOTTOM -1.5V -1.5V 1 20µs PULSE WIDTH Tj = 150°C 0.1 0 Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 2.0 -3. 1.5 1.0 0.5 V ...

Page 4

... IRF7755GPbF 1600 1200 800 400 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 150 0.1 0.2 0 Fig 7. Typical Source-Drain Diode Forward Voltage 4 www.DataSheet. 0V 1MHz SHORTED iss rss oss iss C oss C rss ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com www.DataSheet.in 75 100 125 150 ° SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0. Rectangular Pulse Duration (sec) 1 IRF7755GPbF - + ≤ 1 ≤ 0.1 % Fig 10a. Switching Time Test Circuit d(on) r d(off 10% 90 Fig 10b. Switching Time Waveforms ...

Page 6

... IRF7755GPbF 0.160 0.120 0.080 0.040 0.000 2.0 3.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs Fig 14a. Basic Gate Charge Waveform 6 www.DataSheet. -3.7A 4.0 5.0 6.0 7.0 8.0 Gate Voltage Charge 0.200 0.150 VGS = -2.5V 0.100 VGS = -4.5V 0.050 0.000 Drain Current ( A ) Fig 13. Typical On-Resistance Vs. ...

Page 7

... G@69Ã6TTDB 9V6G & & 9D " IRF7755GPbF P $"66Ã9D @ITDPIT HDGGDH@U@ST DI8C HDI IPH H6Y HDI IPH H6Y     #&!   "!  "   "  &$ ...

Page 8

... IRF7755GPbF @Y6H G@) GPUÃ8P9@ TSSOP-8 Tape and Reel Information IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 www.DataSheet.in UCDTÃDTÃ6IÃDSA''$! 7A 6SUÃIVH7@S 96U@Ã8P9@Ã`XX  Ã2ÃGrhqA…rrÃvqvph‡‚… %À€ ...

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