IRFB20N50K

Manufacturer Part NumberIRFB20N50K
DescriptionSMPS MOSFET
ManufacturerInternational Rectifier
IRFB20N50K datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (116Kb)Embed
Next
Applications
Switch Mode Power Supply (SMPS)
l
l
Uninterruptible Power Supply
l
High Speed Power Switching
Hard Switched and High Frequency
l
Circuits
Benefits
Low Gate Charge Qg results in Simple Drive Requirement
l
l
Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage
l
and Current
l
Low R
DS(on)
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
Peak Diode Recovery dv/dt ƒ
dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Avalanche Characteristics
Symbol
Parameter
E
Single Pulse Avalanche Energy‚
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
Thermal Resistance
Symbol
Parameter
R
Junction-to-Case
JC
R
Case-to-Sink, Flat, Greased Surface
CS
R
Junction-to-Ambient
JA
www.irf.com
IRFB20N50K
SMPS MOSFET
HEXFET
V
DSS
500V
@ 10V
GS
@ 10V
GS
-55 to + 150
Typ.
–––
–––
–––
Typ.
–––
0.50
–––
PD - 94418
®
Power MOSFET
R
typ.
I
DS(on)
D
0.21
20A
TO-220AB
Max.
Units
20
12
A
80
280
W
2.2
W/°C
± 30
V
6.9
V/ns
300
°C
10
N
Max.
Units
330
mJ
20
A
28
mJ
Max.
Units
0.45
–––
°C/W
58
1
4/2/02

IRFB20N50K Summary of contents

  • Page 1

    ... Repetitive Avalanche Energy AR Thermal Resistance Symbol Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA www.irf.com IRFB20N50K SMPS MOSFET HEXFET V DSS 500V @ 10V GS @ 10V GS - 150 Typ. ––– ––– ––– Typ. ...

  • Page 2

    Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current ...

  • Page 3

    VGS TOP 15V 12V 10V 8.0V 7.0V 10 6.0V 5.5V BOTTOM 5.0V 1 0.1 5.0V 20µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 ...

  • Page 4

    0V, C iss = SHORTED C rss = C gd 10000 C oss = Ciss 1000 Coss 100 Crss ...

  • Page 5

    C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.001 0.00001 0.0001 Fig 11. Maximum ...

  • Page 6

    D.U 20V GS 0. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

  • Page 7

    D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * www.irf.com + ƒ - „ P.W. Period D = Period Body Diode Forward ...

  • Page 8

    TO-220 Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 1 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ...