IRFB260

Manufacturer Part NumberIRFB260
DescriptionPower MOSFET(Vdss=200V/ Rds(on)max=0.040ohm/ Id=56A)
ManufacturerInternational Rectifier
IRFB260 datasheet
 


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Applications
l
High frequency DC-DC converters
Benefits
l
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective C
l
Simplify Design, (See App. Note AN1001)
l
Fully Characterized Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
Peak Diode Recovery dv/dt ƒ
dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Case-to-Sink, Flat, Greased Surface
CS
R
Junction-to-Ambient
JA
Notes  through … are on page 8
www.irf.com
SMPS MOSFET
IRFB260N
HEXFET
V
DSS
200V
to
OSS
@ 10V
GS
@ 10V
GS
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
PD - 94270
®
Power MOSFET
R
max
I
DS(on)
D
0.040
56A
TO-220AB
Max.
Units
56
40
A
220
380
W
2.5
W/°C
± 20
V
10
V/ns
°C
Max.
Units
0.40
–––
°C/W
62
1
8/29/01

IRFB260 Summary of contents

  • Page 1

    ... Mounting torqe, 6- screw Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA Notes  through … are on page 8 www.irf.com SMPS MOSFET IRFB260N HEXFET V DSS 200V to OSS @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ...

  • Page 2

    ... IRFB260N Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...

  • Page 3

    ... TOP 100 BOTTOM 4.5V 10 4.5V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 3 3 175°C 2.5 2.0 1.5 1.0 0.5 0.0 -60 11.0 13.0 15.0 Fig 4. Normalized On-Resistance IRFB260N VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 20µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage (V) 56A =  -40 - 100 120 140 160 180 ° ...

  • Page 4

    ... IRFB260N 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.00 100. 175°C 10. 25°C 1.00 0.10 0.0 0.5 1 Source-toDrain Voltage (V) Fig 7 ...

  • Page 5

    ... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms  0.001 0. Rectangular Pulse Duration (sec) 1 IRFB260N D.U. 10V µ d(off ...

  • Page 6

    ... IRFB260N Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 850 ...

  • Page 7

    ... Low Leakage Inductance Current Transformer - „ dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® Power MOSFETs IRFB260N + =10V ...

  • Page 8

    ... IRFB260N TO-220AB Package Outline Dimensions are shown in millimeters (inches (. (. (. (. (. (. (. (. 1.40 (. 1.15 (. (.1 00 IME & ...