IRFB260 International Rectifier, IRFB260 Datasheet

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IRFB260

Manufacturer Part Number
IRFB260
Description
Power MOSFET(Vdss=200V/ Rds(on)max=0.040ohm/ Id=56A)
Manufacturer
International Rectifier
Datasheet

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l
l
l
l
www.irf.com
Applications
Absolute Maximum Ratings
Thermal Resistance
Notes  through … are on page 8
Benefits
I
I
I
P
V
dv/dt
T
T
R
R
R
D
D
DM
J
STG
D
GS
@ T
@ T
JC
CS
JA
High frequency DC-DC converters
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective C
Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
200V
DSS
OSS
300 (1.6mm from case )
Typ.
0.50
–––
–––
HEXFET
IRFB260N
10 lbf•in (1.1N•m)
to
-55 to + 175
R
Max.
220
380
± 20
2.5
DS(on)
56
40
10
0.040
®
Power MOSFET
Max.
max
0.40
–––
62
TO-220AB
PD - 94270
Units
Units
W/°C
°C/W
V/ns
56A
°C
W
I
A
V
8/29/01
D
1

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IRFB260 Summary of contents

Page 1

... Mounting torqe, 6- screw Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA Notes  through … are on page 8 www.irf.com SMPS MOSFET IRFB260N HEXFET V DSS 200V to OSS @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ...

Page 2

... IRFB260N Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25° ...

Page 3

... TOP 100 BOTTOM 4.5V 10 4.5V 1 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 3 3 175°C 2.5 2.0 1.5 1.0 0.5 0.0 -60 11.0 13.0 15.0 Fig 4. Normalized On-Resistance IRFB260N VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 20µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage (V) 56A =  -40 - 100 120 140 160 180 ° ...

Page 4

... IRFB260N 100000 0V MHZ C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000.00 100. 175°C 10. 25°C 1.00 0.10 0.0 0.5 1 Source-toDrain Voltage (V) Fig 7 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com R Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 ° 10 d(on) Fig 10b. Switching Time Waveforms  0.001 0. Rectangular Pulse Duration (sec) 1 IRFB260N D.U. 10V µ d(off ...

Page 6

... IRFB260N Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 850 ...

Page 7

... Low Leakage Inductance Current Transformer - „ dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® Power MOSFETs IRFB260N + =10V ...

Page 8

... IRFB260N TO-220AB Package Outline Dimensions are shown in millimeters (inches (. (. (. (. (. (. (. (. 1.40 (. 1.15 (. (.1 00 IME & ...

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