IRFB52N15 International Rectifier, IRFB52N15 Datasheet

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IRFB52N15

Manufacturer Part Number
IRFB52N15
Description
Power MOSFET(Vdss=150V/ Rds(on)max=0.032ohm/ Id=50A)
Manufacturer
International Rectifier
Datasheet

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Notes  through ‡
l
l
l
l
www.irf.com
Applications
Absolute Maximum Ratings
Thermal Resistance
Benefits
I
I
I
P
P
V
dv/dt
T
T
R
R
R
R
D
D
DM
J
STG
D
D
GS
@ T
@ T
JC
CS
JA
JA
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Low Gate-to-Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
@T
Switching Losses
C
C
A
C
= 25°C
= 100°C
= 25°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation ‡
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw†
Junction-to-Case
Case-to-Sink, Flat, Greased Surface †
Junction-to-Ambient†
Junction-to-Ambient‡
are on page 11
to Simplify Design, (See
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
IRFB52N15D
TO-220AB
V
150V
DSS
300 (1.6mm from case )
Typ.
0.50
–––
–––
–––
HEXFET
-55 to + 175
10 lbf•in (1.1N•m)
IRFS52N15D
R
Max.
240
320
± 30
3.8
2.1
5.5
DS(on)
60
43
D
2
0.032
Pak
®
IRFSL52N15D
Power MOSFET
IRFB52N15D
IRFS52N15D
Max.
max
0.47
–––
62
40
IRFSL52N15D
PD - 94357
TO-262
Units
Units
W/°C
°C/W
V/ns
60A
°C
W
I
A
V
D
1
12/12/01

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IRFB52N15 Summary of contents

Page 1

... DSS 150V TO-220AB IRFB52N15D @ 10V GS @ 10V GS - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– ––– 94357 IRFB52N15D IRFS52N15D IRFSL52N15D ® Power MOSFET R max I DS(on) D 0.032 60A 2 D Pak TO-262 IRFS52N15D IRFSL52N15D Max ...

Page 2

IRFB/IRFS/IRFSL52N15D Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP 15V 12V 10V 8.0V 7.0V 100 6.0V 5.5V BOTTOM 5. 300µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.00 100. ...

Page 4

IRFB/IRFS/IRFSL52N15D 100000 0V, C iss = rss = oss = 10000 Ciss 1000 Coss 100 Crss ...

Page 5

T , Case Temperature C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05  SINGLE PULSE 0.02 0.01 (THERMAL RESPONSE) ...

Page 6

IRFB/IRFS/IRFSL52N15D Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped ...

Page 7

D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel HEXFET ...

Page 8

IRFB/IRFS/IRFSL52N15D TO-220AB Package Outline Dimensions are shown in millimeters (inches (. (. (. (. ...

Page 9

D Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) - AX. 2 1 (.6 10) 1 (.5 ...

Page 10

IRFB/IRFS/IRFSL52N15D TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" 10 INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = ...

Page 11

... Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. This product has been designed and qualified for the Automotive [Q101] (IRFB52N15D), IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www ...

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