IRFB52N15 International Rectifier, IRFB52N15 Datasheet - Page 2

• Manufacturer Part Number: IRFB52N15
• Description: Power MOSFET(Vdss=150V/ Rds(on)max=0.032ohm/ Id=50A)
• Manufacturer: International Rectifier

IRFB/IRFS/IRFSL52N15D
Dynamic @ T
Diode Characteristics
Static @ T
Avalanche Characteristics
I
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
E
I
E
I
I
I
V
t
Q
t
GSS
DSS
d(on)
d(off)
SM
r
f
AR
S
rr
on
V
2
fs
DS(on)
(BR)DSS
GS(th)
iss
oss
rss
oss
oss
oss
AS
AR
SD
g
gs
gd
rr
(BR)DSS
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) †
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Single Pulse Avalanche Energy‚†
Avalanche Current
Repetitive Avalanche Energy
Parameter
Parameter
Parameter
Parameter
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
Min. Typ. Max. Units
19
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
2770 –––
3940 –––
0.16 –––
–––
––– 0.032
–––
–––
–––
–––
––– -100
–––
590
110
260
550
–––
–––
–––
140
780 1170
79
25
34
16
47
28
25
240
–––
250
100
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
210
5.0
1.5
25
37
51
60
V/°C
µA
nA
nC
ns
pF
nS
nC
S
V
V
V
A
Typ.
–––
–––
–––
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
Reference to 25°C, I
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs „
I
integral reverse
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 36A
= 36A
= 25°C, I
= 25°C, I
= 2.5
= 0V, I
= 10V, I
= V
= 150V, V
= 120V, V
= 30V
= -30V
= 50V, I
= 120V
= 10V, „
= 75V
= 10V „
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 36A
= 36A, V
= 250µA
= 36A
= 36A
GS
GS
= 0V to 120V …
Max.
= 1.0V, ƒ = 1.0MHz
= 120V, ƒ = 1.0MHz
470
36
32
= 0V
= 0V, T
www.irf.com
D
GS
= 1mA
„
J
= 0V „
G
= 150°C
Units
S
+L
mJ
mJ
A
D
S
D
)