2SK1062

Manufacturer Part Number2SK1062
DescriptionN CHANNEL MOS TYPE (HIGH SPEED SWTICHING/ ANALOG SWITCHING/ INTERFACE APPLICATIONS)
ManufacturerToshiba Semiconductor
2SK1062 datasheets
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
Page 1/5

Download datasheet (588Kb)Embed
Next
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
High Speed Switching Applications
Analog Switching Applications
Interface Applications
Excellent switching time: t
= 14 ns (typ.)
on
High forward transfer admittance: |Y
Low on resistance: R
= 0.6 Ω (typ.) @ I
DS (ON)
Enhancement-mode
Complementary to 2SJ168
Absolute Maximum Ratings
Characteristics
Drain-source voltage
Gate-source voltage
DC
Drain current
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
2SK1062
| = 100 ms (min)
fs
@I
= 50 mA
D
= 50 mA
D
(Ta = 25°C)
Symbol
Rating
Unit
V
60
V
DS
±20
V
V
GSS
I
200
D
mA
I
800
DP
P
200
mW
D
T
150
°C
ch
−55~150
T
°C
stg
1
2SK1062
Unit: mm
JEDEC
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
2007-11-01