2SK2110 NEC, 2SK2110 Datasheet
2SK2110
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2SK2110 Summary of contents
Page 1
... The 2SK2110 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output operating This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators, such as motors and DC/DC converters. ...
Page 2
... 0 4 =0.3 A DS(on 0.3 A DS(on iss 1.0 MHz oss rss 0 GS(on 2SK2110 MIN. TYP. MAX. UNIT 1 0.8 1.5 2.0 V 0.4 S 0.95 1.5 0.82 1.2 100 1 ...
Page 3
... TRANSFER CHARACTERISTICS 2.5 V 0.1 0.01 0.001 0.0001 0.5 1.6 2.0 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 1 ˚C 75 ˚C 0 0.01 2SK2110 100 - Drain to Source Voltage - ˚ ˚C –25 ˚C 1 1 Gate to Source Voltage - ˚ ˚C –25 ˚C ...
Page 4
... SD 4 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 SWITCHING CHARACTERISTICS MHz 0.05 0.1 50 100 0.9 1 2SK2110 Gate to Source Voltage - d(off d(on GS(on) 0.2 0 Drain Current - A ...
Page 5
... REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide 2SK2110 Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 ...
Page 6
... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SK2110 M4 94.11 ...