2SK2363 NEC, 2SK2363 Datasheet

no-image

2SK2363

Manufacturer Part Number
2SK2363
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK2363
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Document No. TC-2504A
Date Published May 1995 P
Printed in Japan
(O. D. No. TC-8063A)
DESCRIPTION
designed for high voltage switching applications.
FEATURES
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (2SK2363/2SK2364)
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
* PW
** Starting T
The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor
Low On-Resistance
2SK2363: R
2SK2364: R
Low C
High Avalanche Capability Ratings
Isolate TO-220 Package
iss
10 s, Duty Cycle
ch
C
DS (on)
DS (on)
= 25 ˚C, R
iss
= 1600 pF TYP.
= 0.5
= 0.6
G
c
A
= 25
= 25 ˚C)
(V
(V
= 25 ˚C)
1 %
N-CHANNEL POWER MOS FET
GS
GS
= 10 V, I
= 10 V, I
, V
GS
= 20 V
DATA SHEET
INDUSTRIAL USE
D
D
V
V
I
I
P
P
T
T
I
E
A
D(DC)
D(pulse)
AS
= 4.0 A)
= 4.0 A)
DSS
GSS
T1
T2
ch
stg
AS
= 25 ˚C)
SWITCHING
2SK2363/2SK2364
–55 to +150 ˚C
0
450/500
MOS FIELD EFFECT TRANSISTOR
150
320
2.0
8.0
35
8.0
30
32
mJ
W
W
˚C
V
V
A
A
A
0.7±0.1
2.54
MP-45F (ISOLATED TO-220)
PACKAGE DIMENSIONS
10.0±0.3
1 2 3
Gate
(in millimeter)
1.5±0.2
2.54
1.3±0.2
3.2±0.2
Source
Drain
Body
Diode
1. Gate
2. Drain
3. Source
0.65±0.1
4.5±0.2
©
2.7±0.2
2.5±0.1
1994

Related parts for 2SK2363

2SK2363 Summary of contents

Page 1

... DESCRIPTION The 2SK2363/2SK2364 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2363 0.5 DS (on) 2SK2364 0.6 DS (on) • Low 1600 pF TYP. iss iss • High Avalanche Capability Ratings • Isolate TO-220 Package ABSOLUTE MAXIMUM RATINGS (T ...

Page 2

... V F (S-D) t 350 1.5 rr Test Circuit 2 Switching Time D.U. PG 1us Duty Cycle 2SK2363/2SK2364 TEST CONDITIONS 2SK2363 4.0 A 2SK2364 4 DSS ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 160 0 20 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 000 Pulsed 15 2SK2363/2SK2364 100 120 140 160 T - Case Temperature - ˚C C Pulsed Drain to Source Voltage - V 3 ...

Page 4

... PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 1 Pulsed 1.0 0.5 0 100 V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 4.0 3.0 2.0 1.0 0 100 –50 2SK2363/2SK2364 R = 62.5 ˚C/W th (ch- 3.75 ˚C/W th (ch- ˚C c Single Pulse 10 100 1 000 Pulsed 2 Gate to Source Voltage - V ...

Page 5

... Source to Drain Voltage - V SD SWITCHING CHARACTERISTICS 1 000 = 0 100 10 1.0 1 000 0.1 1 Drain Current - A D DYNAMIC INPUT/OUTPUT CHARACTERISTICS 400 V DD 300 200 100 V DS 100 Gate Charge - nC g 2SK2363/2SK2364 Pulsed 1.0 1 (off (on 150 100 ...

Page 6

... V DD 300 200 100 100 125 Starting Tch-Starting Channel Temperature - ˚C 6 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 1.0 150 100 2SK2363/2SK2364 150 ˚C Starting 100 Inductive load - H ...

Page 7

... Safe operating area of Power MOS FET. The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2SK2363/2SK2364 Document No. TEI-1202 IEI-1209 ...

Page 8

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 2SK2363/2SK2364 M4 94.11 ...

Related keywords