2SK2510 NEC, 2SK2510 Datasheet

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2SK2510

Manufacturer Part Number
2SK2510
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet

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Document No. D10290EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
DESCRIPTION
for high current switching applications.
FEATURES
• Super Low On-Resistance
• Low C
• Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
*
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The 2SK2510 is N-Channel MOS Field Effect Transistor designed
R
R
The diode connected between the gate and source of the transistor
PW
DS (on)1
DS (on)2
iss
10 s, Duty Cycle
= 20 m
= 30 m
C
iss
= 1 600 pF TYP.
(V
(V
GS
GS
= 10 V, I
= 4 V, I
c
A
= 25 ˚C)
= 25 ˚C)
1 %
N-CHANNEL POWER MOS FET
D
D
= 20 A)
= 20 A)
DATA SHEET
INDUSTRIAL USE
A
V
V
I
I
P
P
T
T
D(DC)
D(pulse)
= 25 ˚C)
DSS
GSS
T1
T2
ch
stg
SWITCHING
–55 to +150 ˚C
MOS FIELD EFFECT TRANSISTOR
150
2.0
60
160
35
20
40
˚C
W
W
V
V
A
A
0.7±0.1
2.54
MP-45F (ISOLATED TO-220)
PACKAGE DIMENSIONS
10.0±0.3
Gate
1 2 3
Gate
Protection
Diode
(in millimeter)
1.5±0.2
2.54
2SK2510
1.3±0.2
3.2±0.2
Source
Drain
Body
Diode
1. Gate
2. Drain
3. Source
0.65±0.1
4.5±0.2
©
2.7±0.2
2.5±0.1
1995

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2SK2510 Summary of contents

Page 1

... DESCRIPTION The 2SK2510 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-Resistance (on (on)2 GS • Low 600 pF TYP. iss iss • Built-in G-S Protection Diode ABSOLUTE MAXIMUM RATINGS (T ...

Page 2

... Test Circuit 2 Gate Charge (on (on (off off 2SK2510 TEST CONDITIONS DSS ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 200 100 100 Pulsed = 2SK2510 100 120 140 160 - Case Temperature - ˚C C Pulsed Drain to Source Voltage - V 3 ...

Page 4

... DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE = 000 V GS GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 100 – 2SK2510 Single Pulse 100 1 000 Pulsed Gate to Source Voltage - 100 150 - Channel Temperature - ˚ ...

Page 5

... FORWARD VOLTAGE 100 = 0 150 V SD SWITCHING CHARACTERISTICS 1 000 = 0 100 10 1.0 100 0.1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 0 2SK2510 Pulsed 1.5 0.5 1.0 - Source to Drain Voltage - V t d(off d(on 1.0 10 100 I - Drain Current - A ...

Page 6

... Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. 6 2SK2510 Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 ...

Page 7

... [MEMO] 2SK2510 7 ...

Page 8

... The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. 8 2SK2510 M4 94.11 ...

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