2SK2514 NEC, 2SK2514 Datasheet
2SK2514
Manufacturer Part Number
2SK2514
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC
Datasheet
1.2SK2514.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2514
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Document No. D10296EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
DESCRIPTION
for high current switching applications.
FEATURES
•
•
•
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
* PW
The 2SK2514 is N-Channel MOS Field Effect Transistor designed
Super Low On-Resistance
R
R
Low C
Built-in G-S Protection Diode
DS (on)1
DS (on)2
iss
10 s, Duty Cycle
15 m
23 m
C
iss
= 2 100 pF TYP.
(V
(V
GS
GS
= 10 V, I
= 4 V, I
c
A
= 25 ˚C)
= 25 ˚C)
1 %
N-CHANNEL POWER MOS FET
D
D
= 25 A)
= 25 A)
DATA SHEET
INDUSTRIAL USE
V
V
I
I
P
P
T
T
A
D (DC)
D (pulse)
DSS
GSS
T1
T2
ch
stg
= 25 ˚C)
SWITCHING
–55 to +150 ˚C
MOS FIELD EFFECT TRANSISTOR
150
150
3.0
60
200
20
50
W
W
˚C
V
V
A
A
2.2±0.2
5.45
Gate Protection
Diode
Gate
15.7 MAX.
1
PACKAGE DIMENSIONS
2
(in millimeter)
3
4
5.45
1.0±0.2
MP-88
Source
Drain
2SK2514
3.2±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Body
Diode
0.6±0.1
©
2.8±0.1
4.7 MAX.
1.5
1995
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