2SK2688-01 Fuji Electric, 2SK2688-01 Datasheet
2SK2688-01
Manufacturer Part Number
2SK2688-01
Description
N-channel MOS-FET
Manufacturer
Fuji Electric
Datasheet
1.2SK2688-01.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK2688-01
Manufacturer:
FUJITSU
Quantity:
12 500
Company:
Part Number:
2SK2688-01L
Manufacturer:
FUJITSU
Quantity:
12 500
Company:
Part Number:
2SK2688-01S
Manufacturer:
FUJITSU
Quantity:
12 500
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
Turn-Off-Time t
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
Item
Thermal Resistance
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- V
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (T
- Electrical Characteristics (T
Thermal Characteristics
GS
= ± 30V Guarantee
on
off
(t
(t
on
on
=t
=t
d(off)
d(on)
+t
+t
f
r
)
)
C
=25°C),
C
=25°C),
FAP-IIS Series
2SK2688-01
unless otherwise specified
unless otherwise specified
BV
Q
V
V
E
P
V
R
C
C
C
V
R
R
T
T
g
Symbol
Symbol
Symbol
I
I
I
I
t
t
t
t
I
t
DS
D
D(puls)
GS
AV
D
ch
stg
DSS
GS(th)
DSS
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
th(ch-c)
th(ch-a)
L=0.277mH,Vcc=12V
I
I
V
V
V
I
I
I
L = 100µH
channel to case
channel to air
D
D
D
D
D
DS
GS
GS
=1mA
=1mA
=25A
=25A
=25A
I
F
-55 ~ +150
-dI
=30V
=0V
=±16V
=2xI
Rating
F
/dt=100A/µs T
Test conditions
Test conditions
DR
I
F
±200
=I
±50
±16
520
150
R
V
V
V
V
30
60
DR
V
f=1MHz
I
GS
GS
DS
CC
GS
D
GS
=50A
=10
=0V T
V
V
T
T
V
V
V
V
=25V
=15V
=10V
T
=0V
V
ch
ch
ch
GS
DS=
DS
GS
GS
DS
GS
=25°C
=125°C
=25°C
=0V
=0V
=4V
=10V
=25V
V
=0V
GS
ch
Unit
ch
mJ
°C
°C
W
V
A
A
V
=25°C
=25°C
> Outline Drawing
> Equivalent Circuit
N-channel MOS-FET
30V
Min.
Min.
1,0
30
50
22
0,0075
Typ.
Typ.
0,012
2750
1300
1,14
0,17
600
180
150
1,5
0,2
10
10
45
13
55
85
±50A
0,017
125,0
Max.
Max.
2,08
4130
1950
0,01
1,71
500
100
900
270
230
130
2,0
1,0
20
83
60W
°C/W
°C/W
Unit
Unit
mA
µA
nA
µC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
V
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2SK2688-01 Summary of contents
Page 1
... Turn-Off-Time off on d(off) f Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance 2SK2688-01 FAP-IIS Series =25°C), unless otherwise specified Symbol Rating ± ±200 D(puls) V ± 520 AV P ...
Page 2
... D Typical Capacitances vs C=f =0V; f=1MHz [V] DS Avalanche Energy Derating E(AV)=f(starting Tch): Vcc=12V; I =50A AV< 10 Starting Tch [°C] 2SK2688-01 FAP-IIS Series Drain-Source-On-State Resistance vs f(T ): ID=25A; VGS=10V DS(on [°C] ch Typical Forward Transconductance vs =f(I ); 80µs pulse test; V =25V; T =25°C ...
Page 3
... N-channel MOS-FET 30V ±50A 60W > Characteristics 125 100 120 100 2SK2688-01 FAP-IIS Series Typical Switching Characteristics V [V] SD Power Dissipation P =f [°C] C Maximum Avalanche Current vs. starting T I =f(starting This specification is subject to change without notice! ...