2SK3514 Fuji Electric, 2SK3514 Datasheet - Page 3
2SK3514
Manufacturer Part Number
2SK3514
Description
N CHANNEL SILICON POWER MOSFET
Manufacturer
Fuji Electric
Datasheet
1.2SK3514.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3514-01
Manufacturer:
FUJITSU
Quantity:
12 500
2SK3514-01
100
2.0
1.5
1.0
0.5
0.0
0.1
24
22
20
18
16
14
12
10
10
8
6
4
2
0
1
0.00
0
-50
VGS=f(Qg):ID=8A, Tch=25°C
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
Typical Gate Charge Characteristics
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=4A,VGS=10V
0.25
-25
10
0.50
0
20
0.75
25
360V
Qg [nC]
VSD [V]
Tch [ C]
1.00
max.
225V
30
50
Vcc= 90V
1.25
75
40
typ.
1.50
100
50
1.75
125
2.00
150
60
100p
10n
10p
10
10
10
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1n
1p
2
1
0
10
-50
t=f(ID):Vcc=300V, VGS=10V, RG=10
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Typical Switching Characteristics vs. ID
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
-1
-25
td(on)
10
10
0
0
0
25
FUJI POWER MOSFET
VDS [V]
ID [A]
td(off)
10
Tch [ C]
50
1
max.
min.
75
10
100
10
2
Ciss
Coss
Crss
1
tr
tf
125
150
10
3
3