2SK3519-01 Fuji Electric, 2SK3519-01 Datasheet

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2SK3519-01

Manufacturer Part Number
2SK3519-01
Description
N CHANNEL SILICON POWER MOSFET
Manufacturer
Fuji Electric
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3519-01
Manufacturer:
FUJITSU
Quantity:
12 500
2SK3519-01
Super FAP-G Series
*4 VDS 500V
*1 L=4.98mH, Vcc=50V
Thermalcharacteristics
Item
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Operating and storage
temperature range
Item
Electrical characteristics (T
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
< =
off
on
*2 Tch 150°C
= <
c
=25°C unless otherwise specified)
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
D(puls]
AR
Symbol
ch
stg
AS
D
DS
GS
DS
*3 I
R
R
Symbol
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
I
V
t
Q
GSS
AV
th(ch-c)
th(ch-a)
Ta=25 °C
Tc=25 °C
r
f
rr
I
/dt
fs
DSS
(BR)DSS
GS(th)
oss
DS(on)
iss
rss
G
GS
GD
SD
(on)
(off)
rr
F
= <
*1
*4
*2
*3
-I
D
, -di/dt=50A/µs, Vcc BV
Absolute maximum ratings
Ratings
-55 to +150
Test Conditions
V
V
R
V
V
V
I
I
Test Conditions
I
I
V
V
f=1MHz
V
I
V
L=4.98mH T
I
I
-di/dt=100A/µs
channel to ambient
channel to case
D
D
D
D
D
F
F
CC
GS
+150
GS
DS
DS
GS
DS
GS
CC
GS
=8A V
=8A V
= 250 µ A
= 250 µ A
=4A
=4A
=8A
500
±32
±30
173
=300V I
=10V
=10
±8
20
65
=500V V
=400V V
=±30V
=25V
=0V
=250V
=10V
8
5
2.02
V
N-CHANNEL SILICON POWER MOSFET
V
GS
GS
GS
DS
=0V T
=0V
V
= <
=10V
=25V
D
ch
GS
GS
DS
=4A
V
V
=25°C
GS
DS
=0V
=0V
=0V
DSS
T
=0V
=V
ch
ch
kV/µs
kV/µs
W
°C
°C
=25°C
Unit
=25°C
mJ
, Tch 150°C
V
A
A
V
A
GS
T
= <
T
ch
ch
=125°C
=25°C
TO-220AB
Outline Drawings
FUJI POWER MOSFET
Equivalent circuit schematic
Gate(G)
Min.
Min.
500
3.0
3.5
8
Typ.
Typ.
750
100
10
14
24
20
0.65
7
4.0
9
6
8.5
5.5
1.00
0.65
3.5
Source(S)
Drain(D)
1130
Max.
250
100
150
62.0
Max.
25
21
14
36
30
13
1.92
5.0
0.85
6.0
9
8.5
1.50
Units
Units
°C/W
°C/W
ns
V
V
µA
nA
S
pF
nC
A
V
µs
µC
1

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2SK3519-01 Summary of contents

Page 1

... Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current I D Pulsed drain current ...

Page 2

... Characteristics Allowable Power Dissipation PD=f(Tc Typical Transfer Characteristic ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25° 0 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C VGS=6.5V 7.0V 7.5V 2.0 1.5 1.0 0.5 0 [A] Typical Output Characteristics ID=f(VDS):80µ ...

Page 3

... Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 7.0 6.5 6.0 5.5 max. 5.0 4.5 typ. 4.0 3.5 min. 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 - Tch [ C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10n 1n 100p 10p VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG= td(off) td(on [A] Typical Gate Charge Characteristics VGS=f(Qg):ID=8A, Tch=25° ...

Page 4

... Transient Thermal Impedance Zth(ch-c)=f(t):D=t D=0 0.2 0.1 0. 0.02 0. Maximum Avalanche Current Pulsewidth I =f(t ):starting Tch=25°C. Vcc=50V Single Pulse [sec ...

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