BU2520AX Philips Semiconductors, BU2520AX Datasheet - Page 5

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BU2520AX

Manufacturer Part Number
BU2520AX
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
Philips Semiconductors
September 1997
Silicon Diffused Power Transistor
ts = f (I
ts = f (I
Fig.13. Typical collector storage and fall time.
Fig.14. Typical collector storage and fall time.
12
11
10
12
11
10
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
B
B
0.1
0.1
); tf = f (I
); tf = f (I
ts, tf / us
ts, tf / us
B
B
); parameter I
); parameter I
5 A
5 A
IB / A
IB / A
1
1
16 kHz
32 kHz
C
C
; T
; T
IC =
IC =
6 A
6 A
j
j
= 85˚C; f = 16 kHz
= 85˚C; f = 32 kHz
ts
ts
tf
tf
10
10
5
120
110
100
0.001
90
80
70
60
50
40
30
20
10
0.01
0.1
0
10
1E-06
Fig.15. Normalised power dissipation.
1
Fig.16. Transient thermal impedance.
0
PD%
Zth / (K/W)
D = 0
0.05
0.02
Z
0.5
0.2
0.1
PD% = 100 P
th j-hs
20
= f(t); parameter D = t
1E-04
40
60
D
Ths / C
/P
t / s
D 25˚C
80
Normalised Power Derating
1E-02
with heatsink compound
P
= f (T
Product specification
100
D
t
BU2520AX
p
hs
p
T
120
/T
)
1E+00
D =
Rev 2.200
140
t
T
p
t

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