BU2520D

Manufacturer Part NumberBU2520D
DescriptionSilicon Diffused Power Transistor
ManufacturerPhilips Semiconductors
BU2520D datasheet
 


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Philips Semiconductors
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V
Collector-emitter voltage peak value
CESM
V
Collector-emitter voltage (open base)
CEO
I
Collector current (DC)
C
I
Collector current peak value
CM
P
Total power dissipation
tot
V
Collector-emitter saturation voltage
CEsat
I
Collector saturation current
Csat
V
Diode forward voltage
F
t
Fall time
f
PINNING - SOT93
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
Collector-emitter voltage peak value
CESM
V
Collector-emitter voltage (open base)
CEO
I
Collector current (DC)
C
I
Collector current peak value
CM
I
Base current (DC)
B
I
Base current peak value
BM
-I
Reverse base current
B(AV)
-I
Reverse base current peak value
BM
P
Total power dissipation
tot
T
Storage temperature
stg
T
Junction temperature
j
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
Junction to mounting base
th j-mb
R
Junction to ambient
th j-a
1 Turn-off current.
November 1995
CONDITIONS
V
= 0 V
BE
T
25 ˚C
mb
I
= 6.0 A; I
= 1.2 A
C
B
I
= 6.0 A
F
I
= 6.0 A; I
= 1.0 A
CM
B(end)
PIN CONFIGURATION
tab
1
2
3
CONDITIONS
V
= 0 V
BE
average over any 20 ms period
1
T
25 ˚C
mb
CONDITIONS
-
in free air
1
Product specification
BU2520D
TYP.
MAX.
UNIT
-
1500
V
-
800
V
-
10
A
-
25
A
-
125
W
-
5.0
V
6
-
A
-
2.2
V
0.35
0.5
s
SYMBOL
c
b
Rbe
e
MIN.
MAX.
UNIT
-
1500
V
-
800
V
-
10
A
-
25
A
-
6
A
-
9
A
-
150
mA
-
6
A
-
125
W
-65
150
˚C
-
150
˚C
TYP.
MAX.
UNIT
-
1.0
K/W
45
-
K/W
Rev 1.200

BU2520D Summary of contents

  • Page 1

    ... B(end) PIN CONFIGURATION tab CONDITIONS average over any 20 ms period ˚C mb CONDITIONS - in free air 1 Product specification BU2520D TYP. MAX. UNIT - 1500 V - 800 125 2.2 V 0.35 0.5 s SYMBOL c b ...

  • Page 2

    ... CONDITIONS MHz 6 650 1 5 B(end) B (-dI / ICM t IC IBend Fig.2. Switching times definitions. 2 Product specification BU2520D MIN. TYP. MAX. UNIT - - 1 2.0 mA 100 - 300 mA 7.5 13 800 - - 5 ...

  • Page 3

    ... Product specification BU2520D VCESAT / V BU2520D IC/ 125 sat = parameter VBESAT / V BU2520D 125 sat = parameter VCESAT / V BU2520D 125 ...

  • Page 4

    ... Fig.13. Forward bias safe operating area & I CDC = Second-breakdown limits independant of temperature Product specification BU2520D Zth / (K/W) 0.5 0.2 0.1 0.05 0. 1E-04 1E-02 1E+ Fig.12. Transient thermal impedance f(t); parameter j- ...

  • Page 5

    ... Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". November 1995 15.2 max 14 13.6 2 max 4.25 4.15 2.2 max 0.5 min 5.5 1.15 0.95 11 Fig.14. SOT93; pin 2 connected to mounting base. 5 Product specification BU2520D 4.6 max 2 4.4 21 max 12.7 max 13.6 min 0.5 0.4 M 1.6 Rev 1.200 ...

  • Page 6

    ... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 6 Product specification BU2520D Rev 1.200 ...