BU2520D Philips Semiconductors, BU2520D Datasheet - Page 3

• Manufacturer Part Number: BU2520D
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
November 1995
Silicon Diffused Power Transistor
Fig.5. Typical base-emitter saturation voltage.
IBend
-VBB
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
10
Fig.4. Typical DC current gain. h
1
0.1
0.1
VBESAT / V
hFE
Fig.3. Switching times test circuit .
V
BE
Tj = 25 C
Tj = 125 C
sat = f (I
LB
parameter V
1 V
1
C
); parameter I
IC / A
IC / A
5 V
1
D.U.T.
CE
Rbe
10
+ 150 v nominal
adjust for ICM
C
Lc
FE
/I
Tj = 25 C
Tj = 125 C
Cfb
B
IC/IB=
BU2520D
= f (I
BU2520D
3
4
5
C
100
)
10
3
Fig.6. Typical collector-emitter saturation voltage.
Fig.8. Typical collector-emitter saturation voltage.
Fig.7. Typical base-emitter saturation voltage.
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
0
1
0.1
0.1
0
VCESAT / V
VBESAT / V
VCESAT / V
V
V
V
CE
Tj = 25 C
Tj = 125 C
BE
CE
Tj = 25 C
Tj = 125 C
sat = f (I
sat = f (I
sat = f (I
IC = 4 A
1
IC/IB =
1
5
4
3
C
5 A
); parameter I
B
B
); parameter I
); parameter I
IC / A
6 A
IB / A
IB / A
1
2
8 A
10
Product specification
3
C
/I
C
C
Tj = 25 C
Tj = 125 C
BU2520D
B
BU2520D
BU2520D
BU2520D
Rev 1.200
IC=
8 A
6 A
5 A
4 A
100
10
4