BU2520DW Philips Semiconductors, BU2520DW Datasheet
BU2520DW
Manufacturer Part Number
BU2520DW
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BU2520DW.pdf
(6 pages)
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Philips Semiconductors
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
PINNING - SOT429
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
THERMAL RESISTANCES
1 Turn-off current.
September 1997
Silicon Diffused Power Transistor
SYMBOL
V
V
I
I
P
V
I
V
t
SYMBOL
V
V
I
I
I
I
-I
-I
P
T
T
SYMBOL
R
R
C
CM
Csat
f
C
CM
B
BM
PIN
B(AV)
BM
stg
j
CESM
CEO
tot
CEsat
F
tab
CESM
CEO
tot
th j-mb
th j-a
1
2
3
base
collector
emitter
collector
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Junction to mounting base
Junction to ambient
DESCRIPTION
PIN CONFIGURATION
1
1
CONDITIONS
V
T
I
I
I
CONDITIONS
V
average over any 20 ms period
T
CONDITIONS
-
in free air
C
F
Csat
2
BE
mb
BE
mb
1
= 6.0 A
= 6.0 A; I
3
= 0 V
= 6.0 A; I
= 0 V
25 ˚C
25 ˚C
B
= 1.2 A
B(end)
= 1.0 A
SYMBOL
b
TYP.
TYP.
MIN.
0.35
Product specification
-65
45
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Rbe
BU2520DW
MAX.
MAX.
MAX.
1500
e
1500
c
800
125
800
150
125
150
150
5.0
2.2
0.5
1.0
10
25
10
25
6
9
6
-
-
Rev 1.100
UNIT
UNIT
UNIT
K/W
K/W
mA
W
W
˚C
˚C
V
V
A
A
V
A
V
V
V
A
A
A
A
A
s
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