BU2520DW Philips Semiconductors, BU2520DW Datasheet - Page 2

• Manufacturer Part Number: BU2520DW
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Measured with half sine-wave voltage (curve tracer).
September 1997
Silicon Diffused Power Transistor
mb
SYMBOL
I
I
I
BV
R
V
V
V
h
h
V
mb
SYMBOL
C
t
t
CES
CES
EBO
s
f
FE
FE
CEOsust
CEsat
BEsat
F
be
c
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
EBO
Fig.1. Switching times waveforms (16 kHz).
VCE
IC
IB
PARAMETER
Collector cut-off current
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
PARAMETER
Collector capacitance
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
DIODE
20us
TRANSISTOR
64us
26us
2
IBend
ICsat
t
t
t
CONDITIONS
V
V
T
V
I
V
I
L = 25 mH
I
I
I
I
I
CONDITIONS
I
I
I
(-dI
B
B
C
C
C
C
F
E
Csat
B(end)
j
BE
BE
EB
EB
= 6 A
= 600 mA
= 0 A; I
= 6.0 A; I
= 6.0 A; I
= 1.0 A; V
= 6 A; V
= 0 A; V
= 125 ˚C
B
= 0 V; V
= 0 V; V
= 7.5 V; I
= 7.5 V
= 6.0 A; L
/dt = 0.8 A / s)
= 1.0 A; L
2
C
CE
CB
= 100 mA;
B
B
CE
CE
CE
= 10 V; f = 1 MHz
= 1.2 A
= 1.2 A
= 5 V
C
C
= V
= V
= 0 A
= 5 V
B
= 650 H; C
= 5.3 H; -V
CESMmax
CESMmax
IC
IB
Fig.2. Switching times definitions.
;
fb
BB
= 19 nF;
IBend
ts
= 4 V;
MIN.
100
800
7.5
5
-
-
-
-
-
-
-
TYP.
TYP.
13.5
0.35
115
4.5
50
13
7
-
-
-
-
-
-
-
Product specification
tf
10 %
90 %
ICsat
BU2520DW
MAX.
MAX.
- IBM
300
1.0
2.0
5.0
1.1
9.5
2.2
5.5
0.5
-
-
-
-
-
t
t
Rev 1.100
UNIT
UNIT
mA
mA
mA
pF
V
V
V
V
V
s
s